Induced ion-channel instability

SYNCHROTRON TECHNOLOGY AND APPLICATIONS

Induced ion-channel instability

DAI Zhi-Min

Nuclear Science and Techniques

Vol.16, No.2

pp.65-69

Published in print 01 Apr 2005

CLC：TL501

21800

In this paper, a new mechanism of electromagnetic instability, the induced ion-channel instability, is studied. It is based on the transverse driven betatron oscillation of relativistic electron beam induced by an additional magnetic undulator with a period close to the betatron wavelength in an ion channel. As its amplitude is sensitive to the electron beam energy, the driven betatron oscillation may determine electron beam grouping in the ponderomotive potential by selecting the undulator strength and period, and it provides a new mechanism of electron bunching, resulting in electromagnetic instability. Under proper condition, a new free-electron laser based on this mechanism may be realized.

Free-electron laserIon channel instabilityDriven betatron oscillation

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