Phase structure of the CPD prepared CdS films before and after Ar+ ion irradiation

Phase structure of the CPD prepared CdS films before and after Ar⁺ ion irradiation

LEI Jia-Rong，

Yang Bin，

CHA Deokjoon，

HUANG Ning-Kang，

CHEN Jian-Xuan，

WANG De-Zhi

Nuclear Science and Techniques

Vol.13, No.1

pp.25-30

Published in print 01 Feb 2002

CLC：O485, TN305

37000

CdS films prepared with chemical pyrolysis deposition (CPD) at different temperature during film growth were characterized by XRD. Hexagon-like struc-ture appeared at the temperature of 350-500℃, while wurtzite phase was observed at temperature of 540℃ during film growth. Also CdS films prepared by CPD at 400℃ were undergone post annealing at different temperature of 200-600℃ or post Ar⁺ ion irradiation. It is found that wurtzite phase happened when the annealing temperature rose to 600℃. And hexagon-like structure existed at the annealing temperature from 25℃ to near 500℃. Ar⁺ ion irradiation could not cause phase transformation, but induce some preferred orientations and an increase in grain size for the CdS films.

Phase transformationCdS filmAnnealingAr+ ion irradiation

References

Goldstein A M, Echer C M, Ativisators A P.

Science, 1992, 256: 1425-1427

William S, Jr Rees, Getrud K.

J Mater Res, 1996, 1: 3005-3012

Vankar V D, Das S R, Natch P et al. Phys Stat Solidi, 1978, A45: 665-667

Hall R B, Meakin J D.

Thin Solid Films, 1979, 63: 103-107

Getting M, Stephens K.

Radiat Eff, 1974, 22: 53 56

Narayanan K L, Vijayakumar K P, Nair K G M et al. 9th International Conference on Ion Beam Modification of Materials, Canberra, Australia, 5-10 Feb. 1995, Book of Abstracts 10.095