Atomic mobility in energetic cluster deposition

Atomic mobility in energetic cluster deposition 1 corresp first-author Corresponding author. Fax: +86-021-6564-3715, E-mail: zypan@fudan.ac.cn; panzy@fudan.edu.cn Corresponding author. Fax: +86-021-6564-3715, E-mail: zypan@fudan.ac.cn; panzy@fudan.edu.cn zypan@fudan.ac.cn 1 1 1 1 1 Institute of Modern Physics, Fudan University, Shanghai 200433 Institute of Modern Physics, Fudan University, Shanghai 200433 This paper tries to outline the influence of atomic mobility on the initial fabrication of thin films formed by LECBD. Based on our recent studies on low-energy cluster beam deposition (LECBD) by molecular dynamics simulation, two examples, the deposition of small carbon clusters on Si and diamond surfaces and Al clusters on Ni substrate, were mainly discussed. The impact energy of the cluster ranges from 0.1 eV to 100 eV. In the former case, the mobility and the lateral migration of surface atoms, especially the recoil atoms, are enhanced with increasing the impact energy, which promote the film to be smoother and denser. For the latter case, the transverse kinetic energy of cluster atoms, caused mainly by the collision between moving cluster atoms, dominates the lateral spread of cluster atoms on the surface, which is contributive to layer-by-layer growth of thin films. Our result is consistent with the experimental observations that the film structure is strongly dependent on the impact energy. In addition, it elucidates that the atomic mobility takes a leading role in the structure characteristic of films formed by LECBD. Atomic mobility Energetic cluster Thin film growth Molecular dynamics simulation References Jensen P . Reviews of Modern Physics , 1999 , 71 : 1695 Reviews of Modern Physics Perez A , Melinon P , Dupuis V et al . J Phys D , 1997 , 30 : 709 J Phys D Donadio D , Colombo L , Milani P et al . Phys Rev Lett , 1999 , 83 : 776 Phys Rev Lett Bromann K , Felix C , Brune H et al . Science , 1996 , 274 : 956 Science Heiz U , Vanolli F , Sanchez A et al . J Am Chem Soc , 1998 , 120 : 9668 J Am Chem Soc Hou M , Azzaoui M E . Phys Rev , 2000 , B62 : 5117 Phys Rev Lifsitz Y , Lempert G D , Grossman E . Phys Rev Lett , 1994 , 72 : 2753 Phys Rev Lett Yao D S , Liu J R , Wang L G et al . Chin Phys Lett , 2000 , 17 : 540 Chin Phys Lett Li Z J , Pan Z Y . Euro Phys J , 2003 , D23 : 369 Euro Phys J Wei Q , Pan Z Y , Li Z J et al . Phys Rev , 2003 , B68 : 235408 Phys Rev Wang Y X , Pan Z Y , et al . Nucl Instru Meth , 2001 , B180 : 251 Nucl Instru Meth Wang Y X , Pan Z Y , Wei Q et al . Surf Sci , 2002 , 512 : 128 Surf Sci Raghavachari K , Binkley J S . J Chem Phys , 1987 , 87 : 2191 J Chem Phys Brenner D W . Phys Rev , 1990 , B42 : 9458 Phys Rev Tersoff J . Phys Rev , 1989 , B39 : 5566 Phys Rev Berendsen H J C , Postman J P M , van Gunsteren W F et al . J Chem Phys , 1984 , 81 : 3684 J Chem Phys Yeadon M , Yang J C , Ghaly M et al . Met Sci Eng , 1999 , B67 : 76 Met Sci Eng Gao F , Bacon D J , Ackland G J . Phil Mag , 1993 , A67 : 275 Phil Mag Hou Q , Hou M , Bardotti L et al . Phys Rev , 2000 , B62 : 2825 Phys Rev Hsieh H , Averback R S , Sellers H et al . Phys Rev , 1992 , B45 : 4417 Phys Rev Egelhoff W F , Jacob I . Phys Rev Lett , 1989 , 62 : 921 Phys Rev Lett Evans J W , Sanders D E , Thiel P A et al . Phys Rev , 1990 , B41 ( 8 ): 5410 Phys Rev Yue Y , Ho Y K , Pan Z Y . Europhys Lett , 1997 , 40 : 453 Europhys Lett O484,O485,O562.5 Supported patially by the National Nature Science Foundation of China, under grant No.10275012 2004-09-13 2004-12-01 2021-01-19 2004 Nuclear Science and Techniques 06 15