XPS STUDIES OF IRRADIATED HARD AND SOFT Si-SiO₂

XPS STUDIES OF IRRADIATED HARD AND SOFT Si-SiO 2 1 first-author 2 3 3 3 3 Xin jiang Institute of Physics, Academia Sinica, Urumqi 830011, China Xin jiang Institute of Physics, Academia Sinica, Urumqi 830011, China Lishan Institute of Microelectronics, Aero-Space Industry Ministry, Xian 710600, China Lishan Institute of Microelectronics, Aero-Space Industry Ministry, Xian 710600, China Beijing Centre of Physical and Chemical Analysis, Beijing 100081, China Beijing Centre of Physical and Chemical Analysis, Beijing 100081, China The interfacial structure of hard and soft oxides grown by dry oxidation on <100> n-type silicon substrates is examined using high resolution mild X-ray photoelectron spectroscopy (XPS) before and after irradiation. Substantial differences in silicon of silica state (B.E. 103.4 eV), silicon of transitional state (B.E. 101.5 eV), surplus oxygen (B.E. 529.6 eV) and negative two-valence oxygen (B.E. 531.4 eV) are observed between the two kinds of samples. The XPS spectra strongly depend on the conditions of irradiation for soft samples, but do not as remarkablely as soft samples for hard samples. The effects of irradiation doses on XPS are greater than that of irradiation bias fields. Some viewpoints of irradiation induced hole electron pair are proposed to explain the results. XPS Radiation hard Radiation soft Si-SiO 2 Bias field Radiation dose REFERENCES Wang Shouwe . Research and development of semiconductor device . Beijing : Sinica Publishing House , 1988 ; 36 Research and development of semiconductor device Zhong Cun Shengwu . Surface physics . Beijing : Scholastic Book and Journal Publishing Hourse , 1989 ; 1 Surface physics Stahlbush R E , Carlosand W E , Prokes S M . IEEE Trans Nucl Sci , 1987 ; NS-34 ( 6 ): 1680 IEEE Trans Nucl Sci Chihiro Itoh , Toshio Suzuki , Noriaki Itoh . Phys Rev , 1990 ; B41 ( 6 ): 3794 Phys Rev Grunthaner F J , Lewis B F , Zamini N . IEEE Trans Nucl Sci , 1980 ; NS-27 ( 6 ): 1640 IEEE Trans Nucl Sci Liu Changshi , Zhao Yuanfu , Liu Fen . Nuclear Techniques (in Chinese) , 1992 ; 15 ( 9 ): 554 Nuclear Techniques (in Chinese) Packwood R H , Remond G , Holloway P H . Surface and Interface Analysis , 1988 ; 11 : 127 Surface and Interface Analysis Nagasima N , Enari H . Jap J Appl Phys , 1971 ; 10 ( 4 ): 441 Jap J Appl Phys Sugano T , Hoh K . Jap J Appl Phys , 1968 ; 7 ( 7 ): 715 Jap J Appl Phys Grunthaner F J , Maserjian J . IEEE Trans Nucl Sci , 1977 ; NS-24 ( 6 ): 2108 IEEE Trans Nucl Sci Liu Changshi , We Qinzhi , Zhang Lingshan . Microelectronics and Computer (in Chinese) , 1989 ; 6 ( 12 ): 5 Microelectronics and Computer (in Chinese) Song Qinqi , Microelectronics and Computer (in Chinese) , 1989 ; 6 ( 12 ): 11 Microelectronics and Computer (in Chinese) Zhong Cun Shengwu . Surface physics . Beijing : Scholastic Book and Journal Publishing House , 1989 ; 97 Surface physics This work was supported by Beijing Zhongguancun Associated Center of Analysis and Measurement 1993-08-01 2021-02-05 1993 Nuclear Science and Techniques 3 4