The phase effect of electronic stopping power

Zhong-Quan Ma; Yu-Feng Zheng

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The phase effect of electronic stopping power

Updated：2021-02-05

- The phase effect of electronic stopping power
- Nuclear Science and Techniques Vol. 9, Issue 2, (1998)
- Affiliations：
  
  1.Department of Physics, Xinjiang University, Urumqi 830046
  2.Department of Materials Science and Engineering, Tsinghua University, Beijing 100084
- Author bio：
  
  Ma Zhong-Quan is Associate Professor, Ph D awarded by Tsinghua University in 1996, Head of Functional Materials Laboratory in Department of Physics, Xinjiang University. He was born in Oct. 1958 and graduated with honours from Xinjiang University in 1982, majoring solid state physics and materials physics, and as a visiting scholar in JAERI-Takasaki and Department of Physics, Ritsumeikan University, Japan from Jan. 1994 to Jan. 1995. Over 50 papers have been published in Chinese and foreign journals, which dealed with the interaction between ion and solids, the synthesis, characterization and modification of metal, semiconductor, ceramics and insulator materials. Specific research interests presently include diamond film growth, doping of diamond by ion implantation, laser annealing of radiation damage in damond, the interaction of ion beam with carbon based materials, synthesis of the ultra-hard carbon-nitride thin films, wide band gap nitrides, carbon nanostructures and the application of advanced solid analysis techniques to advanced materials systems.
  
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- Funds：
- DOI： CLC：
- Published：01 May 1998，
  
  Received：03 October 1997，
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Cite this article
Zhong-Quan Ma, Yu-Feng Zheng. The phase effect of electronic stopping power. [J]. Nuclear Science and Techniques 9(2):86-89(1998)
DOI：

Zhong-Quan Ma, Yu-Feng Zheng. The phase effect of electronic stopping power. [J]. Nuclear Science and Techniques 9(2):86-89(1998) DOI：

The phase effect of electronic stopping power 1 2 first-author Ma Zhong-Quan is Associate Professor, Ph D awarded by Tsinghua University in 1996, Head of Functional Materials Laboratory in Department of Physics, Xinjiang University. He was born in Oct. 1958 and graduated with honours from Xinjiang University in 1982, majoring solid state physics and materials physics, and as a visiting scholar in JAERI-Takasaki and Department of Physics, Ritsumeikan University, Japan from Jan. 1994 to Jan. 1995. Over 50 papers have been published in Chinese and foreign journals, which dealed with the interaction between ion and solids, the synthesis, characterization and modification of metal, semiconductor, ceramics and insulator materials. Specific research interests presently include diamond film growth, doping of diamond by ion implantation, laser annealing of radiation damage in damond, the interaction of ion beam with carbon based materials, synthesis of the ultra-hard carbon-nitride thin films, wide band gap nitrides, carbon nanostructures and the application of advanced solid analysis techniques to advanced materials systems. Ma Zhong-Quan is Associate Professor, Ph D awarded by Tsinghua University in 1996, Head of Functional Materials Laboratory in Department of Physics, Xinjiang University. He was born in Oct. 1958 and graduated with honours from Xinjiang University in 1982, majoring solid state physics and materials physics, and as a visiting scholar in JAERI-Takasaki and Department of Physics, Ritsumeikan University, Japan from Jan. 1994 to Jan. 1995. Over 50 papers have been published in Chinese and foreign journals, which dealed with the interaction between ion and solids, the synthesis, characterization and modification of metal, semiconductor, ceramics and insulator materials. Specific research interests presently include diamond film growth, doping of diamond by ion implantation, laser annealing of radiation damage in damond, the interaction of ion beam with carbon based materials, synthesis of the ultra-hard carbon-nitride thin films, wide band gap nitrides, carbon nanostructures and the application of advanced solid analysis techniques to advanced materials systems. 1 Department of Physics, Xinjiang University, Urumqi 830046 Department of Physics, Xinjiang University, Urumqi 830046 Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 Department of Materials Science and Engineering, Tsinghua University, Beijing 100084 A corrective factor ( Ψ ( E , ρ ) ≤1) dependent on ion energy and mass density of material for energy loss has been introduced into Bethe-Bloch formula, so that the energy deposition process of fast ion penetrating through the allotropic solid films are well discussed with the two-component assumption. An analysis expression of electronic stopping power for different phase structures has been derived from the contribution of "valence" and "core" electrons. The two thirds of inelastic scattering arisen from valence electron was revealed by comparing the theoretical calculation and experimental results on both random and oriented lattice site. The corrective factor representative to the role of inner electrons increases with the projectile energy but decreases with mass density of solids. ELPU (Energy loss per unit length) Electronic stopping power Valence electron gas Energetic ion References Thwaites D I . Radia Res , 1985 , 95 : 495 Radia Res Thwaites D I . Nucl Instr & Meth , 1992 , B69 : 53 Nucl Instr & Meth Ma Z Q , Liu J R , Zhu P R . Chin Phys Lett , 1990 , 7 : 226 Chin Phys Lett Luntz M , Heymsfield G M . Phys Rev , 1972 , B6 : 2530 Phys Rev Kitagawa M , Ohtsuki Y H . Phys Rev , 1972 , B5 : 3418 Phys Rev Ziegler J F , Biersack J P , Littmark U . The stopping and range of ions in solids , New York : Pergamon Press , 1985 , vol.1 The stopping and range of ions in solids Kumakhov A , Komarov F F . Energy loss and ion ranges in solids , New York : Gordon and Beach , 1981 Energy loss and ion ranges in solids Bonderup E , Esbensen H , Andersn J U et al . Radia Eff , 1972 , 12 : 261 Radia Eff Lindhard J , Vidensk K Dan . Selsk Mat-Fys Medd , 1965 , 34 : 14 Selsk Mat-Fys Medd Ma Z Q . Chin Phys Lett , 1990 , 7 : 184 Chin Phys Lett Softky S D . Phys Rev , 1961 , 123 : 1685 Phys Rev Ziegler J F , Brodsky M H . J Appl Phys , 1973 , 44 : 188 J Appl Phys Matteson S , Chau E K , Powers D . Phys Rev , 1976 , A14 : 169 Phys Rev The work was supported by the Natural Science Foundation of Xinjing University and partly by STA Program in JAERI, Japan 1997-10-03 1998-05-01 2021-02-05 1998 Nuclear Science and Techniques 2 9

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