Reduction and compensation of lattice stress in high energy P⁺ and P+Sb implanted silicon

Reduction and compensation of lattice stress in high energy P + and P+Sb implanted silicon 1 first-author 1 2 2 Key Laboratary for Radiation Beam Technology and Materials Modification, Institute of Low Energy Nuclear Physics (Beijing Radiation Center), Beijing Normal University, Beijing 100875; Key Laboratary for Radiation Beam Technology and Materials Modification, Institute of Low Energy Nuclear Physics (Beijing Radiation Center), Beijing Normal University, Beijing 100875; South China University of Technology, Guangzhou 510064 South China University of Technology, Guangzhou 510064 The relations of variation of lattice stress to shape, peak concentrations of the P atom depth profile and Sb doses of P+Sb dual implantation were studied in high energy P implantation silicon. The experimental results show that the lattice stress in P-implanted silicon obviously increases with increasing ion dose. The stress of P-implanted silicon with the dose of 2×10 13 /cm 2 is 2.2 times greater than at a dose of 3.6×10 12 /cm 2 . The stress decreases rapidly as the annealing time increases. It is very interesting that the stress has a negative value when the concentration of P atoms in the implanted layer is below 6×10 16 /cm 3 , whereas the stress becomes positive when the concentration is greater than 6×10 16 /cm 3 . The stress increases rapidly with increasing Sb ion dose after P implantation. The stress has a positive value before annealing. If the Sb dose is below 1×10 16 /cm 2 , the stress is negative after annealing, and it is positive when the Sb dose is higher than 1×10 16 /cm 2 . The stress is close to zero for a Sb implantation dose of 1×10 16 /cm 2 . The best compensation dose of Sb to P implantation dose of 3×10 16 /cm 2 is 1×10 16 /cm 2 . Silicon lattice stress P + and P+Sb implantation Rapid thermal annealing Reduction and compensation References Pramanik D . Current M. Solid State Technol , 1984 , 27 : 211 Current M. Solid State Technol Dietrich H B . Proc SPIE , 1985 , 530 : 30 Spinelli P , Escaron J , Soubic A et al . Nucl Instr Meth , 1985 , B6 : 283 Nucl Instr Meth Takasu S . Semiconductor silicon , Princeton Electron Society Inc , 1997 , 456 Semiconductor silicon Jiang L S , Zhao S N , Ling H C . Chin J Infared Res . 1990 , 9 : 425 Chin J Infared Res Zhang T H , Wu Y G , ed. Surface optímum technology by ion implantation , Beijing : Metallurgical Industry Publisher , 1993 , 233 Surface optímum technology by ion implantation Wu Y G , Zhang T H , Luo Y . Nucl Instr Meth , 1998 , B135 : 570 Nucl Instr Meth O472, O483, TN305.3 Supported by National Natural Science Foundation of China (No. 59671051) 99-10-18 2000-05-01 2021-02-05 2000 Nuclear Science and Techniques 2 11