Experimental study on heavy ion single event effects in flash-based FPGAs

Zhen-Lei YANG; Xiao-Hui WANG; Hong SU; Jie LIU; Tian-Qi LIU; Kai XI; Bin WANG; Song GU; Qian-Shun SHE

doi:10.1007/s41365-016-0015-8

Your Location：

Home >

Browse articles >

Experimental study on heavy ion single event effects in flash-based FPGAs

NUCLEAR ELECTRONICS AND INSTRUMENTATION | Updated：2021-02-23

- Experimental study on heavy ion single event effects in flash-based FPGAs
- Nuclear Science and Techniques Vol. 27, Issue 1, Article number: 7(2016)
- Affiliations：
  
  1.Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China
  2.University of Chinese Academy of Sciences, Beijing 100049, China
- Author bio：
  
  Corresponding author. suhong@impcas.ac.cn
- Funds：
- DOI：10.1007/s41365-016-0015-8
  CLC：
Scan for full text
Zhen-Lei YANG, Xiao-Hui WANG, Hong SU, et al. Experimental study on heavy ion single event effects in flash-based FPGAs. [J]. Nuclear Science and Techniques 27(1):7(2016)
DOI：

Zhen-Lei YANG, Xiao-Hui WANG, Hong SU, et al. Experimental study on heavy ion single event effects in flash-based FPGAs. [J]. Nuclear Science and Techniques 27(1):7(2016) DOI： 10.1007/s41365-016-0015-8.

摘要

Abstract

With extensive use of flash-based field programmable gate arrays (FPGAs) in military and aerospace applications, single event effects (SEEs) of FPGAs induced by radiations have been a major concern. In this paper, we present SEE experimental study of a flash-based FPGA from Microsemi ProASIC3 product family. The relation between the cross section and different linear energy transfer (LET) values for the logic tiles and embedded RAM blocks (BRAMs) are obtained. The results show that the sequential logic cross section depends not too much on operating frequency of the device. And the relationship between 0→1 upsets (zeros) and 1→0 upsets (ones) is different for different kinds of D-flip-flops (DFFs). The devices are not sensitive to SEL up to a LET of 99.0MeV·cm,2,/mg. Post-beam tests show that the programming module is damaged due to the high-LET ions.

关键词

Keywords

Single event effects (SEEs)flash-based FPGAsHIRFLheavy ion experiments

references

Nicolaidis M. ed. Soft errors in modern electronic systems. Frontiers in Electronic Testing, 41, 2011. DOI: 10.1007/978-1-4419-6993-4http://doi.org/10.1007/978-1-4419-6993-4

Sterpone L, Battezzati N, Kastensmidt F L, et al. An analytical model of the propagation induced pulse broadening (PIPB) effects on single event transient in flash-based FPGAs, IEEE T Nucl Sci, 2011, 58: 2333-2340. DOI: 10.1109/TNS.2011.2161886http://doi.org/10.1109/TNS.2011.2161886

Zhang Z G, Liu J, Hou M D, et al. Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation, Chinese Phys B, 2013, 22: 086102. DOI: 10.1088/1674-1056/22/8/086102http://doi.org/10.1088/1674-1056/22/8/086102

Dodd P E, Shaneyfelt M R, Schwank J R, et al. Current and future challenges in radiation effects on CMOS electronics, IEEE T Nucl Sci, 2010, 57: 1747-1763. DOI: 10.1109/TNS.2010.2042613http://doi.org/10.1109/TNS.2010.2042613

Yahagi Y, Yamaguchi H, Ibe E, et al. A novel feature of neutron-induced multi-cell upsets in 130 and 180 nm SRAMs, IEEE T Nucl Sci, 2007, 54: 1030-1036. DOI: 10.1109/TNS.2007.897066http://doi.org/10.1109/TNS.2007.897066

Rezgui S, Wang J J, Tung E C, et al. New methodologies for SET characterization and mitigation in flash-based FPGAs, IEEE T Nucl Sci, 2007, 54: 2512-2524. DOI: 10.1109/TNS.2007.910126http://doi.org/10.1109/TNS.2007.910126

Abate F, Sterpone L, Violante M, et al. A study of the single event effects impact on functional mapping within flash-based FPGAs. Design, Automation & Test in Europe Conference & Exhibition, 2009 DATE '09, 2009, 1226-1229. DOI: 10.1109/DATE.2009.5090850http://doi.org/10.1109/DATE.2009.5090850

Hiemstra D M, Chayab F, Mohammed Z. Single event upset characterization of the Virtex-4 field programmable gate array using proton irradiation. Radiation Effects Data Workshop (REDW), 2006 IEEE, 2006, 105-108. DOI: 10.1109/REDW.2006.295476http://doi.org/10.1109/REDW.2006.295476

Hiemstra D M, Battiston G, Gill P. Single event upset characterization of the Virtex-5 field programmable gate array using proton irradiation. Radiation Effects Data Workshop (REDW), 2010 IEEE, 2010, 4-4. DOI: 10.1109/REDW.2010.5619490http://doi.org/10.1109/REDW.2010.5619490

Hiemstra D M, Kirischian V. Single event upset characterization of the Virtex-6 field programmable gate array using proton irradiation. Radiation Effects Data Workshop (REDW), 2012 IEEE, 2012, 1-4. DOI: 10.1109/REDW.2012.6353716http://doi.org/10.1109/REDW.2012.6353716

Rezgui S, Wang J J, Sun Y, et al. New reprogrammable and non-volatile radiation tolerant FPGA: RTA3P. Aerospace Conference, 2008 IEEE, 2008, 1-11. DOI: 10.1109/AERO.2008.4526472http://doi.org/10.1109/AERO.2008.4526472

Berg M, Wang J J, Ladbury R, et al. An analysis of single event upset dependencies on high frequency and architectural implementations within Actel RTAX-S family field programmable gate arrays, IEEE T Nucl Sci, 2006, 53: 3569-3574. DOI: 10.1109/TNS.2006.886043http://doi.org/10.1109/TNS.2006.886043

Poivey C, Grandjean M, Guerre F X. Radiation characterization of Microsemi ProASIC3 flash FPGA family. Radiation Effects Data Workshop (REDW), 2011 IEEE, 2011, 1-5. DOI: 10.1109/REDW.2010.6062510http://doi.org/10.1109/REDW.2010.6062510

Rezgui S, Wang J J, Sun Y, et al. Configuration and routing effects on the SET propagation in flash-based FPGAs, IEEE T Nucl Sci, 2008, 55: 3328-3335. DOI: 10.1109/TNS.2008.2007726http://doi.org/10.1109/TNS.2008.2007726

Microsemi, DS0097. ProASIC3 flash family FPGAs datasheet, Jun, 2015. http://www.microsemi.com/products/fpga-soc/fpga/proasic3-e#documentshttp://www.microsemi.com/products/fpga-soc/fpga/proasic3-e#documents

Microsemi, ProASIC3 fabric user’s guide, Sep, 2012. http://www.microsemi.com/products/fpga-soc/fpga/proasic3-e#documentshttp://www.microsemi.com/products/fpga-soc/fpga/proasic3-e#documents

Tong T, Wang X H, Zhang Z G, et al. Effectiveness and failure modes of error correcting code in industrial 65 nm CMOS SRAMs exposed to heavy ions. Nucl Sci Tech, 2014, 25: 010405. DOI: 10.13538/j.1001-8042/nst.25.010405http://doi.org/10.13538/j.1001-8042/nst.25.010405

Liu T Q, Liu J, Geng C, et al. Influence of deposited energy in sensitive volume on temperature dependence of SEU sensitivity in SRAM devices. Radiation and Its Effects on Components and Systems (RADECS), 2013 14th European Conference on, 2013, 1-6. DOI: 10.1109/RADECS.2013.6937358http://doi.org/10.1109/RADECS.2013.6937358

Wang X H, Tong T, Su H, et al. A flexible and robust soft-error testing system for microelectronic devices and integrated circuits. Nucl Sci Tech, 2015, 26: 030401. DOI: 10.13538/j.1001-8042/nst.26.030401http://doi.org/10.13538/j.1001-8042/nst.26.030401

Yang Z L, Wang X H, Su H, et al. Design and verification of test method for the single event effect in flash-based FPGA. Nucl Tech, 2015, 38: 020404. (in chinese) DOI: 10.11889/j.0253-3219.2015.hjs.38.020404http://doi.org/10.11889/j.0253-3219.2015.hjs.38.020404

Li Y H, He C H, Zhao F Z, et al. Experimental study on heavy ion single event effects in SOI SRAMs, Nucl Instrum Meth B, 2009, 267: 83-86. DOI: 10.1016/j.nimb.2008.10.082http://doi.org/10.1016/j.nimb.2008.10.082

Allen G R, Swift G M. Single event effects test results for advanced field programmable gate arrays. Radiation Effects Data Workshop (REDW), 2006 IEEE, 2006, 115-120. DOI: 10.1109/REDW.2006.295478http://doi.org/10.1109/REDW.2006.295478

Views

Downloads

CSCD

Alert me when the article has been cited

Submit

Tools

Publicity Resources

An on-line fast multi-track locating algorithm for high-resolution single event effect test platform

A flexible and robust soft-error testing system for microelectronic devices and integrated circuits

Related Author

No data

Related Institution

Advanced Energy Science and Technology Guangdong Laboratory

Address：Editorial Office of NST, 2019 Jialuo Road, Jiading, Shanghai 201800, China Postal code：201800
Email：nst@sinap.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 沪ICP备05005479号-1 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰