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PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation
NUCLEAR CHEMISTRY, RADIOCHEMISTRY, NUCLEAR MEDICINE | Updated:2021-02-23
    • PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation

    • Nuclear Science and Techniques   Vol. 28, Issue 8, Article number: 105(2017)
    • DOI:10.1007/s41365-017-0263-2    

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  • Guo-Dong Cheng, Ye Chen, Long YAN, et al. PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation. [J]. Nuclear Science and Techniques 28(8):105(2017) DOI: 10.1007/s41365-017-0263-2.

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Key Laboratory in University for Radiation Beam Technology and Materials Modification, Institute of Low Energy Nuclear Physics, Beijing Normal University; Beijing Radiation Center
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Department of Physics, Nanchang University
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College of Nuclear Science and Technology, Joint Laboratory of Jinping Ultra-low Radiation Background Measurement of Ministry of Ecology and Environment and Beijing Normal University, Key Laboratory of Beam Technology of Ministry of Education, Beijing Normal University
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