PL and ESR study for defect centers in 4<italic style="font-style: italic">H</italic>-SiC induced by oxygen ion implantation

Guo-Dong Cheng; Ye Chen; Long YAN; Rong-Fang Shen

doi:10.1007/s41365-017-0263-2

Your Location：

Home >

Browse articles >

PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation

NUCLEAR CHEMISTRY, RADIOCHEMISTRY, NUCLEAR MEDICINE | Updated：2021-02-23

- PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation
- Nuclear Science and Techniques Vol. 28, Issue 8, Article number: 105(2017)
- Affiliations：
  
  1.Key Laboratory of Polar Materials and Devices, Ministry of Education of China, East China Normal University, Shanghai 200241, China
  2.Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China
- Author bio：
  
  Corresponding author.E-mail address: yanlong@sinap.ac.cn
- Funds：
- DOI：10.1007/s41365-017-0263-2
  CLC：
Scan for full text
Guo-Dong Cheng, Ye Chen, Long YAN, et al. PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation. [J]. Nuclear Science and Techniques 28(8):105(2017)
DOI：

Guo-Dong Cheng, Ye Chen, Long YAN, et al. PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation. [J]. Nuclear Science and Techniques 28(8):105(2017) DOI： 10.1007/s41365-017-0263-2.

摘要

Abstract

Radiation damage in 4,H,-SiC samples implanted by 70 keV oxygen ion beams was studied using photoluminescence and electron spin resonance techniques. ESR peak of ,g,=2.0053 and two zero-phonon lines (ZPL) were observed with the implanted samples. Combined with theoretical calculations, we found that the main defect in the implanted 4,H,-SiC samples was oxygen-vacancy complex. The calculated defect formation energies showed that the oxygen-vacancy centers were stable in ,n,-type 4,H,-SiC. Moreover, the , $V_{Si} O_{C}^{0}$ , and , $V_{Si} O_{C}^{-1}$ , centers were optically addressable. The results suggest promising spin coherence properties for quantum information science.

关键词

Keywords

Ion implantationElectron spin resonancePhotoluminescenceFirst-principles calculations

references

J.R. Weber, W.F. Koehl, J.B. Varley, et al., Quantum computing with defects. Proc. Natl. Acad. Sci. U.S.A. 107, 8513-8518 (2010). doi: 10.1073/pnas.1003052107http://doi.org/10.1073/pnas.1003052107

P. Neumann, N. Mizuochi, F. Rempp, et al., Multipartite entanglement among single spins in diamond. Science 320, 1326-1329 (2008). doi: 10.1126/science.1157233http://doi.org/10.1126/science.1157233

A.L. Falk, B.B. Buckley, G. Calusine, et al., Polytype control of spin qubits in silicon carbide. Nat. Commun. 4, 1819 (2013). doi: 10.1038/ncomms2854http://doi.org/10.1038/ncomms2854

L.P. Yang, C. Burk, M. Widmann, et al., Electron spin decoherence in silicon carbide nuclear spin bath. Phys. Rev. B 90, 241203 (2014). doi: 10.1103/PhysRevB.90.241203http://doi.org/10.1103/PhysRevB.90.241203

P.G. Baranov, A.P. Bundakova, A.A. Soltamova, et al., Silicon vacancy in SiC as a promising quantum system for single-defect and single-photon spectroscopy. Phys. Rev. B 83, 125203 (2011). doi: 10.1103/PhysRevB.83.125203http://doi.org/10.1103/PhysRevB.83.125203

K. Szász, V. Ivády, I.A. Abrikosov, et al., Spin and photophysics of carbon-antisite vacancy defect in 4H silicon carbide: A potential quantum bit. Phys. Rev. B 91, 121201 (2015). doi: 10.1103/PhysRevB.91.121201http://doi.org/10.1103/PhysRevB.91.121201

H.J. von Bardeleben, J.L. Cantin, E. Rauls, et al., Identification and magneto-optical properties of the NV center in 4H-SiC. Phys. Rev. B 92, 064104 (2015). doi: 10.1103/Physrevb.92.064104http://doi.org/10.1103/Physrevb.92.064104

M. Ishimaru, R.M. Dickerson, K.E. Sickafus, High-dose oxygen ion implantation into 6H-SiC. Appl. Phys. Lett. 75, 352-354 (1999). doi: 10.1063/1.124372http://doi.org/10.1063/1.124372

A. Uedono, S. Tanigawa, T. Ohshima, et al., Oxygen-related defects in O+-implanted 6H-SiC studied by a monoenergetic positron beam. J. Appl. Phys. 86, 5392-5398 (1999). doi: 10.1063/1.371536http://doi.org/10.1063/1.371536

T. Ozaki, Variationally optimized atomic orbitals for large-scale electronic structures. Phys. Rev. B 67, 155108 (2003). doi: 10.1103/Physrevb.67.155108http://doi.org/10.1103/Physrevb.67.155108

N. Troullier, J.L. Martins, Efficient Pseudopotentials for Plane-Wave Calculations. Phys. Rev. B 43, 1993-2006 (1991). doi: 10.1103/PhysRevB.43.1993http://doi.org/10.1103/PhysRevB.43.1993

P. Giannozzi, S. Baroni, N. Bonini,et al., QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials. J. Phys. Condens. Matter 21, 395502 (2009). doi: 10.1088/0953-8984/21/39/395502http://doi.org/10.1088/0953-8984/21/39/395502

J. Heyd, G.E. Scuseria, M. Ernzerhof, Hybrid functionals based on a screened Coulomb potential. J. Chem. Phys. 118, 8207-8215 (2003). doi: 10.1063/1.1564060http://doi.org/10.1063/1.1564060

A. Gali, E. Janzen, P. Deak, et al., Theory of spin-conserving excitation of the NV- center in diamond. Phys. Rev. Lett. 103, 186404 (2009). doi: 10.1103/Physrevlett.103.186404http://doi.org/10.1103/Physrevlett.103.186404

N.T. Son, P.N. Hai, E. Janzen, Silicon antisite in 4H SiC. Phys. Rev. Lett. 87, 045502 (2001). doi: 10.1103/PhysRevLett.87.045502http://doi.org/10.1103/PhysRevLett.87.045502

N.T. Son, X.T. Trinh, L.S. Lovlie, et al., Negative-U System of Carbon Vacancy in 4H-SiC. Phys. Rev. Lett. 109, 187603 (2012). doi: 10.1103/Physrevlett.109.187603http://doi.org/10.1103/Physrevlett.109.187603

Y.G. Zhang, Z. Tang, X.G. Zhao, et al., A neutral oxygen-vacancy center in diamond: A plausible qubit candidate and its spintronic and electronic properties. Appl. Phys. Lett. 105, 052107 (2014). doi: 10.1063/1.4892654http://doi.org/10.1063/1.4892654

N.T. Son, A. Henry, J. Isoya, et al., Electron paramagnetic resonance and theoretical studies of shallow phosphorous centers in3C-,4H-, and 6H-SiC. Phys. Rev. B 73, 075201 (2006). doi: 10.1103/PhysRevB.73.075201http://doi.org/10.1103/PhysRevB.73.075201

L. Gordon, A. Janotti, C.G. Van de Walle, Defects as qubits in 3C- and 4H-SiC. Phys. Rev. B 92, 045208 (2015). doi: 10.1103/Physrevb.92.045208http://doi.org/10.1103/Physrevb.92.045208

S. Arpiainen, K. Saarinen, P. Hautojarvi, et al., Optical transitions of the silicon vacancy in 6H-SiC studied by positron annihilation spectroscopy. Phys. Rev. B 66, 075206 (2002). doi: 10.1103/Physrevb.66.075206http://doi.org/10.1103/Physrevb.66.075206

C.G. Van de Walle, J. Neugebauer, First-principles calculations for defects and impurities: Applications to III-nitrides. J. Appl. Phys. 95, 3851-3879 (2004). doi: 10.1063/1.1682673http://doi.org/10.1063/1.1682673

A. Lenef, S.C. Rand, Electronic structure of the N-V center in diamond: Theory. Phys. Rev. B 53, 13441-13455 (1996). doi: 10.1103/PhysRevB.53.13441http://doi.org/10.1103/PhysRevB.53.13441

J.A. Larsson, P. Delaney, Electronic structure of the nitrogen-vacancy center in diamond from first-principles theory. Phys. Rev. B 77, 165201 (2008). doi: 10.1103/Physrevb.77.165201http://doi.org/10.1103/Physrevb.77.165201

F.M. Hossain, M.W. Doherty, H.F. Wilson, et al., Ab Initio Electronic and Optical Properties of the NV-1 Center in Diamond. Phys. Rev. Lett. 101, 226403 (2008). doi: 10.1103/Physrevlett.101.226403http://doi.org/10.1103/Physrevlett.101.226403

Y. Tu, Z. Tang, X.G. Zhao, et al., A paramagnetic neutral VAlON center in wurtzite AlN for spin qubit application. Appl. Phys. Lett. 103, 072103 (2013). doi: 10.1063/1.4818659http://doi.org/10.1063/1.4818659

Views

Downloads

CSCD

Alert me when the article has been cited

Submit

Tools

Publicity Resources

Photoluminescence from neodymium silicide thin films formed by MEVVA ion source

Surface metallization of PTFE and PTFE composites by ion implantation for low-background electronic substrates in rare-event detection experiments

Free-radical evolution and decay in cross-linked polytetrafluoroethylene irradiated by gamma-rays

Mercury (II) Detection by Water-Soluble Photoluminescent Ultra-Small Carbon Dots Synthesized from Cherry Tomatoes

TiO₂ nanofilm growth by Ti ion implantation and thermal annealing in O₂ atmosphere

Related Author

No data

Related Institution

Key Laboratory in University for Radiation Beam Technology and Materials Modification, Institute of Low Energy Nuclear Physics, Beijing Normal University; Beijing Radiation Center

Department of Materials Science and Engineering, Nanchang University

Department of Physics, Nanchang University

Joint Research Center, Nuctech Company Limited

College of Nuclear Science and Technology, Joint Laboratory of Jinping Ultra-low Radiation Background Measurement of Ministry of Ecology and Environment and Beijing Normal University, Key Laboratory of Beam Technology of Ministry of Education, Beijing Normal University

Address：Editorial Office of NST, 2019 Jialuo Road, Jiading, Shanghai 201800, China Postal code：201800
Email：nst@sinap.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 沪ICP备05005479号-1 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰

PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation

DOI：10.1007/s41365-017-0263-2

摘要

Abstract

关键词

Keywords

references