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1.Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
2.China Academy of Electronic and Information Technology, Beijing 100041, China
Corresponding author, E-mail address: liugp@lzu.edu.cn
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Published:01 October 2018,
Published Online:28 August 2018,
Received:27 February 2018,
Revised:29 April 2018,
Accepted:02 May 2018
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Cite this article
Gui-Peng Liu, Xin Wang, Meng-Nan Li, et al. Effects of high-energy proton irradiation on separate absorption and multiplication GaN avalanche photodiode. [J]. Nuclear Science and Techniques 29(10):139(2018)
Gui-Peng Liu, Xin Wang, Meng-Nan Li, et al. Effects of high-energy proton irradiation on separate absorption and multiplication GaN avalanche photodiode. [J]. Nuclear Science and Techniques 29(10):139(2018) DOI: 10.1007/s41365-018-0480-3.
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