Investigation of maximum proton energy for qualified ground-based evaluation of single event effects in SRAM devices

Zhan-Gang Zhang; Yun Huang; Yun-Fei En; Zhi-Feng Lei

doi:10.1007/s41365-019-0570-x

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Investigation of maximum proton energy for qualified ground-based evaluation of single event effects in SRAM devices

NUCLEAR ELECTRONICS AND INSTRUMENTATION | Updated：2021-02-01

- Investigation of maximum proton energy for qualified ground-based evaluation of single event effects in SRAM devices
- Nuclear Science and Techniques Vol. 30, Issue 3, Article number: 47(2019)
- Affiliations：
  
  1.Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou 510610, China
- Author bio：
  
  Corresponding author. E-mail address: zhangangzhang@163.com
- Funds：
- DOI：10.1007/s41365-019-0570-x
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Zhan-Gang Zhang, Yun Huang, Yun-Fei En, et al. Investigation of maximum proton energy for qualified ground-based evaluation of single event effects in SRAM devices. [J]. Nuclear Science and Techniques 30(3):47(2019)
DOI：

Zhan-Gang Zhang, Yun Huang, Yun-Fei En, et al. Investigation of maximum proton energy for qualified ground-based evaluation of single event effects in SRAM devices. [J]. Nuclear Science and Techniques 30(3):47(2019) DOI： 10.1007/s41365-019-0570-x.

摘要

Abstract

Existing standards show a clear discrepancy in the specification of the maximum proton energy for qualified ground-based evaluation of single event effects, which can range from 180 MeV to 500 MeV. This work finds that the threshold linear energy transfer (LET) of a tested device is a critical parameter for determining the maximum proton energy. The inner mechanisms are further revealed. High-energy deposition events (>10 MeV) in sensitive volumes are attributed to the interaction between protons and the tungsten vias in the metallization layers.

关键词

Keywords

ProtonSingle event effectThreshold LETMonte Carlo simulation

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