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Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs
NUCLEAR ELECTRONICS AND INSTRUMENTATION | Updated:2021-02-01
    • Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs

    • Nuclear Science and Techniques   Vol. 30, Issue 5, Article number: 80(2019)
    • DOI:10.1007/s41365-019-0602-6    

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  • Chang Cai, Tian-Qi Liu, Xiao-Yuan Li, et al. Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs. [J]. Nuclear Science and Techniques 30(5):80(2019) DOI: 10.1007/s41365-019-0602-6.

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