Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs

Chang Cai; Tian-Qi Liu; Xiao-Yuan Li; Jie Liu; Zhan-Gang Zhang; Chao Geng; Pei-Xiong Zhao; Dong-Qing Li; Bing Ye; Qing-Gang Ji; Li-Hua Mo

doi:10.1007/s41365-019-0602-6

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Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs

NUCLEAR ELECTRONICS AND INSTRUMENTATION | Updated：2021-02-01

- Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs
- Nuclear Science and Techniques Vol. 30, Issue 5, Article number: 80(2019)
- Affiliations：
  
  1.Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China
  2.University of Chinese Academy of Sciences, Beijing 100049, China
  3.School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
  4.Academy of Shenzhen State Microelectronic Co., Ltd., Shenzhen 518004, China
  5.Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, Guangzhou 510610, China
- Author bio：
  
  Corresponding author: j.liu@impcas.ac.cn.
- Funds：
- DOI：10.1007/s41365-019-0602-6
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Chang Cai, Tian-Qi Liu, Xiao-Yuan Li, et al. Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs. [J]. Nuclear Science and Techniques 30(5):80(2019)
DOI：

Chang Cai, Tian-Qi Liu, Xiao-Yuan Li, et al. Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs. [J]. Nuclear Science and Techniques 30(5):80(2019) DOI： 10.1007/s41365-019-0602-6.

摘要

Abstract

Single event effects of 1-T structure programmable read-only memory (PROM) devices fabricated with a 130-nm complementary metal oxide semiconductor (CMOS)-based thin/thick gate oxide anti-fuse process were investigated using heavy ions and a picosecond pulsed laser. The cross sections of a single event upset (SEU) for radiation-hardened PROMs were measured using a linear energy transfer (LET) ranging from 9.2 to 95.6 MeV·cm,2,·mg,-1,. The result indicated that the LET threshold for a dynamic bit upset was ~9 MeV·cm,2,·mg,-1, which was lower than the threshold of ~20 MeV·cm,2,·mg,-1, for an address counter upset owing to the additional triple-modular-redundancy structure present in the latch. In addition, a slight hard error was observed in the anti-fuse structure when employing ,209,Bi ions with extremely high LET values (~91.6 MeV·cm,2,·mg,-1,) and large ion fluence (~1 × 10,8, ions·cm,-2,). To identify the detailed sensitive position of an SEU in PROMs, a pulsed laser with a 5-μm beam spot was used to scan the entire surface of the device. This revealed that the upset occurred in the peripheral circuits of the internal power source and I/O pairs rather than in the internal latches and buffers. This was subsequently confirmed by a,181,Ta experiment. Based on the experimental data and a rectangular parallelepiped (RPP) model of the sensitive volume, the space error rates for the used PROMs were calculated using the CRÈME-96 prediction tool. The results showed that this type of PROM was suitable for specific space applications, even in the geosynchronous orbit.

关键词

Keywords

Anti-fuse PROMSingle event effectsHeavy ionsPulsed laserSpace error rate

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