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1.Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China
2.University of Chinese Academy of Sciences, Beijing 100049, China
3.School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
4.Academy of Shenzhen State Microelectronic Co., Ltd., Shenzhen 518004, China
5.Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, Guangzhou 510610, China
Corresponding author: j.liu@impcas.ac.cn.
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Published:01 May 2019,
Published Online:13 April 2019,
Received:08 August 2018,
Revised:10 October 2018,
Accepted:20 October 2018
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Cite this article
Chang Cai, Tian-Qi Liu, Xiao-Yuan Li, et al. Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs. [J]. Nuclear Science and Techniques 30(5):80(2019)
Chang Cai, Tian-Qi Liu, Xiao-Yuan Li, et al. Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs. [J]. Nuclear Science and Techniques 30(5):80(2019) DOI: 10.1007/s41365-019-0602-6.
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