Selective growth of diamond by hot filament CVD using patterned carbon film as mask

Zhoutong HE; Shumin YANG; Qintao LI; Dezhang ZHU; Jinlong GONG

doi:10.1016/S1001-8042(08)60028-7

Your Location：

Home >

Browse articles >

Selective growth of diamond by hot filament CVD using patterned carbon film as mask

LOW ENERGY ACCELERATOR, RAY TECHNOLOGY AND APPLICATIONS | Updated：2021-01-29

- Selective growth of diamond by hot filament CVD using patterned carbon film as mask
- Nuclear Science and Techniques Vol. 19, Issue 2, (2008)
- Affiliations：
  
  1.Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China
  2.Graduate School of Chinese Academy of Sciences, Beijing 100049, China
- Author bio：
  
  Corresponding author. E-mail address: gongjinlong@sinap.ac.cn
- Funds：
- DOI：10.1016/S1001-8042(08)60028-7
  CLC：
Scan for full text
Cite this article
Zhoutong HE, Shumin YANG, Qintao LI, et al. Selective growth of diamond by hot filament CVD using patterned carbon film as mask. [J]. Nuclear Science and Techniques 19(2):83-87(2008)
DOI：

Zhoutong HE, Shumin YANG, Qintao LI, et al. Selective growth of diamond by hot filament CVD using patterned carbon film as mask. [J]. Nuclear Science and Techniques 19(2):83-87(2008) DOI： 10.1016/S1001-8042(08)60028-7.

摘要

Abstract

Selected-area deposition (SAD) of diamond films was achieved on silicon substrates with carbon film mask by hot filament chemical vapor deposition. Needle tip scraped lines were used to grow diamond films. Scanning electron microscope (SEM) investigation demonstrates that highly selective and sharp edged diamond films were produced. The results also demonstrate that the proper substrate temperature is very important for diamond selective growth in this deposition process. Since the enhancement of diamond growth was not observed on the needle tip scraped area of Si wafer with diamond powder scratching, the selective growth was considered to be closely correlated to silicon carbide formed during carbon film deposition and the residual carbon in the scraped area.

关键词

Keywords

Diamond filmSelective depositionHot filament CVDCarbon mask

references

Isberg J, Hammersberg J, Johansson E, et al. Science, 2002, 297: 1670-1672.

Graebner J E, Jin S, Kammlott G W, et al. Appl Phys Lett, 1992, 60: 1576-1578.

Liu H W, Gao C X, Li X, et al. Diam Relat Mater, 2001, 10: 1573-1577.

Takayoshi I, Hiroyuki T, Kazuo K, et al. J Appl Phys, 1990, 67: 7329-7336.

Hirabayashi K, Taniguchi Y, Takamatsu O, et al. Appl Phys Lett, 1988, 53: 1815-1817.

Narayan J, Chen X. J Appl Phys, 1992, 71: 3795-3801.

Davidson J L, Ellis C, Ramesham R. J Electron Mater, 1989, 18: 711-715.

Harris S J, Weiner A M, Prawer S, et al. J Appl Phys, 1996, 80: 2187-2194.

Ferrari A C, Robertson J, Phys Rev B, 2000, 61: 14095-14107.

Lifshitz Y, Kohler T, Frauenheim T, et al. Science, 2002, 297: 1531-1533.

Lifshitz Y, Meng X M, Lee S T, et al. Phys Rev Lett. 2004, 93: 056101-1-056101-4.

Paul N B, Richard L, Wu C, Appl Phys Lett, 1993, 62: 37-39.

Trevor C, Cherns D, Southworth P. TEM Studies of the Nucleation of CVD Diamond on Silicon. Proceedings of Institute of Physics Electron Microscopy and Analysis Group Conference, Bristol, UK, 1991.

Feng Z, Komvopoulos K, Brown I G, et al. J Appl Phys, 1993, 74: 2841-2849.

Iijima S, Aikawa Y, Baba K, J Mater Res, 1991, 6: 1491-1497.

Paul A D, Stevenson A D. Appl Phys Lett, 1991, 59: 1562-1564.

Suzuki T, Yagi M, Shibuki K, et al. Appl Phys Lett, 1994, 65: 540-542.

Lambrecht W R L, Lee C H, Segall B, et al. Nature, 1993, 364: 607-610.

Arnault J C, Saada S, Delclos S, et al. Diam Relat Mater, 2007, 16: 690-694.

Jungheum Y T, Dandy D S. Diam Relat Mater, 2005, 14: 1377-1388.

Chiang M J, Hon M H. J Cryst Growth 2000, 211: 211-215.

Views

Downloads

CSCD

Alert me when the article has been cited

Submit

Tools

Publicity Resources

Highly (111)-textured diamond film growth with high nucleation density

Related Author

No data

Related Institution

Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences

Graduate School of the Chinese Academy of Sciences

Address：Editorial Office of NST, 2019 Jialuo Road, Jiading, Shanghai 201800, China Postal code：201800
Email：nst@sinap.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 沪ICP备05005479号-1 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰