Dose-rate effects of low-dropout voltage regulator at various biases

Yiyuan WANG; Wu LU; Diyuan REN; Yuzhan ZHENG; Bo GAO; Rui CHEN; Wuxiong FEI

doi:10.13538/j.1001-8042/nst.21.352-356

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Dose-rate effects of low-dropout voltage regulator at various biases

LOW ENERGY ACCELERATORS AND RADIATION APPLICATIONS | Updated：2021-01-29

- Dose-rate effects of low-dropout voltage regulator at various biases
- Nuclear Science and Techniques Vol. 21, Issue 6, (2010)
- Affiliations：
  
  1.Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
  2.Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China
  3.Graduate University of Chinese Academy of Sciences, Beijing 100049, China
- Author bio：
  
  Corresponding author. E-mail address: luwu@ms.xjb.ac.cn
- Funds：
- DOI：10.13538/j.1001-8042/nst.21.352-356
  CLC：
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Yiyuan WANG, Wu LU, Diyuan REN, et al. Dose-rate effects of low-dropout voltage regulator at various biases. [J]. Nuclear Science and Techniques 21(6):352-356(2010)
DOI：

Yiyuan WANG, Wu LU, Diyuan REN, et al. Dose-rate effects of low-dropout voltage regulator at various biases. [J]. Nuclear Science and Techniques 21(6):352-356(2010) DOI： 10.13538/j.1001-8042/nst.21.352-356.

摘要

Abstract

A low-dropout voltage regulator, LM2941, was irradiated by ,60,Co ,γ,-rays at various dose rates and biases for investigating the total dose and dose rate effects. The radiation responses show that the key electrical parameters, including its output and dropout voltage, and the maximum output current, are sensitive to total dose and dose rates, and are significantly degraded at low dose rate and zero bias. The integrated circuits damage change with the dose rates and biases, and the dose-rate effects are relative to its electric field.

关键词

Keywords

Dose rate effectsELDRSIonizing radiationLDO voltage regulator

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