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1.College of Computer, National University of Defense Technology, Changsha 410073, China
Corresponding author, li1986p@163.com
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Published:20 October 2015,
Published Online:20 October 2015,
Received:03 March 2015,
Accepted:14 May 2015
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Cite this article
Peng LI, Min-Xuan ZHANG, Zhen-Yu ZHAO, et al. A novel single event upset reversal in 40-nm bulk CMOS 6 T SRAM cells. [J]. Nuclear Science and Techniques 26(5):050405(2015)
Peng LI, Min-Xuan ZHANG, Zhen-Yu ZHAO, et al. A novel single event upset reversal in 40-nm bulk CMOS 6 T SRAM cells. [J]. Nuclear Science and Techniques 26(5):050405(2015) DOI: 10.13538/j.1001-8042/nst.26.050405.
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