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Heavy ion-induced MCUs in 28 nm SRAM-based FPGAs: Upset proportions, classifications, and pattern shapes

NUCLEAR ELECTRONICS AND INSTRUMENTATION | 更新时间：2022-12-30

- Heavy ion-induced MCUs in 28 nm SRAM-based FPGAs: Upset proportions, classifications, and pattern shapes 封面论文增强出版
- Heavy ion-induced MCUs in 28 nm SRAM-based FPGAs: Upset proportions, classifications, and pattern shapes
- 核技术（英文版） 2022年 33卷第12期 (2022)
- 作者机构：
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(12035019;11690041)
- DOI：10.1007/s41365-022-01142-7 中图分类号：
- 纸质出版日期：2022-12，
  
  网络出版日期：2022-12-09，
  
  收稿日期：2022-08-28，
  
  修回日期：2022-10-17，
  
  录用日期：2022-10-29
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引用本文
Heavy ion-induced MCUs in 28 nm SRAM-based FPGAs: Upset proportions, classifications, and pattern shapes[J]. 核技术（英文版）, 2022, 33(12):161

Shuai Gao, Xin-Yu Li, Shi-Wei Zhao, et al. Heavy ion-induced MCUs in 28 nm SRAM-based FPGAs: Upset proportions, classifications, and pattern shapes[J]. Nuclear Science and Techniques, 2022, 33(12):161
Heavy ion-induced MCUs in 28 nm SRAM-based FPGAs: Upset proportions, classifications, and pattern shapes[J]. 核技术（英文版）, 2022, 33(12):161 DOI： 10.1007/s41365-022-01142-7.

Shuai Gao, Xin-Yu Li, Shi-Wei Zhao, et al. Heavy ion-induced MCUs in 28 nm SRAM-based FPGAs: Upset proportions, classifications, and pattern shapes[J]. Nuclear Science and Techniques, 2022, 33(12):161 DOI： 10.1007/s41365-022-01142-7.

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Heavy ion-induced MCUs in 28 nm SRAM-based FPGAs: Upset proportions, classifications, and pattern shapes 封面论文 增强出版

Heavy ion-induced MCUs in 28 nm SRAM-based FPGAs: Upset proportions, classifications, and pattern shapes 封面论文增强出版