Design and simulation of Gaussian shaping amplifier made only with CMOS FET for FEE of particle detector

Evariste WEMBE TAFO; Hong SU; Yi QIAN; Jie KONG; Tongxi WANG

doi:10.13538/j.1001-8042/nst.21.312-315

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Design and simulation of Gaussian shaping amplifier made only with CMOS FET for FEE of particle detector

NUCLEAR ELECTRONICS AND INSTRUMENTATION | Updated：2021-01-29

- Design and simulation of Gaussian shaping amplifier made only with CMOS FET for FEE of particle detector
- Nuclear Science and Techniques Vol. 21, Issue 5, (2010)
- Affiliations：
  
  1.Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China
  2.Department of Physics, University of Douala, Cameroon
- Author bio：
  
  Corresponding author. E-mail address: suhong@impcas.ac.cn
  
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- Funds：
- DOI：10.13538/j.1001-8042/nst.21.312-315 CLC：
- Published：20 October 2010，
  
  Received：23 March 2010，
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Cite this article
Evariste WEMBE TAFO, Hong SU, Yi QIAN, et al. Design and simulation of Gaussian shaping amplifier made only with CMOS FET for FEE of particle detector. [J]. Nuclear Science and Techniques 21(5):312-315(2010)
DOI：

Evariste WEMBE TAFO, Hong SU, Yi QIAN, et al. Design and simulation of Gaussian shaping amplifier made only with CMOS FET for FEE of particle detector. [J]. Nuclear Science and Techniques 21(5):312-315(2010) DOI： 10.13538/j.1001-8042/nst.21.312-315.

Design and simulation of Gaussian shaping amplifier made only with CMOS FET for FEE of particle detector 1 2 first-author 1 corresp Corresponding author. E-mail address: suhong@impcas.ac.cn Corresponding author. E-mail address: suhong@impcas.ac.cn suhong@impcas.ac.cn 1 1 1 Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou 730000, China Department of Physics, University of Douala, Cameroon Department of Physics, University of Douala, Cameroon The objective of this paper is to design and simulate a shaping amplifier circuit for silicon strip, Si(Li), CdZnTe and CsI detectors, etc., which can be further integrated the whole system and adopted to develop CMOS - based application, specific integrated circuit for Front End Electronics(FEE) of read-out system of nuclear physics, particle physics and astrophysics research, etc. It's why we used only CMOS transistor to develop the entire system. A Pseudo-Gaussian shaping amplifier made by fourth-order integration stage and a differentiation stage give a result same as a true CR-RC 4 filter, we perform shaping time in the range, 465 ns to 2.76μs with a low output resistance and the linearity almost good. Shaping Amplifier CMOS transistor Gaussian CR-RC n filter Simulation References Rivetti A , Delaurenti P , A Fast large dynamic range Shaping amplifier for particle detector front-end. INFN-Sezione di Torino , FEE 2006 . http://fee2006.pg.infn.it/talks/fee2006/thursday/02-special-new/03-Rivetti-FEE2006_final.ppt A Fast large dynamic range Shaping amplifier for particle detector front-end. INFN-Sezione di Torino Johnson R P , Poplevin P , Sadrozinski H F-W , et al . CA 95064 , IEEE Trans Nucl Sci vol. 1998 , 45 : 927 - 930 IEEE Trans Nucl Sci Thomas Noulis , Constantinos Deradonis , Stylianos Siskos , et al . Advanced Readout System IC Current Mode Semi-Gaussian Shapers Using CCIIs and OTAs ”. Hindawi Publishing Corporation , Feb 2007 , 1 - 12 . Advanced Readout System IC Current Mode Semi-Gaussian Shapers Using CCIIs and OTAs “CR-200 Gaussian Shaping Amplifier”: application guide cremate. Rev.2 , April 2008 . http://cremat.com “CR-200 Gaussian Shaping Amplifier”: application guide cremate. Rev.2 Proteus 6.7 SP3. Labcenter Electronic 1989-2005 . http://w.w.w.labcenter.co.uk Proteus 6.7 SP3. Labcenter Electronic 1989-2005 Wembe Tafo E , Su H , Peng Y , et al . Nucl Sci Tech , 2008 , 19 ( 1 ): 39 - 44 Nucl Sci Tech Khoman P , Eliyahu Z , Low Voltage Standard CMOS Opamp Design Techniques, ECE1352F , 2004 . Low Voltage Standard CMOS Opamp Design Techniques, ECE1352F Boaz Shem-Tov , Mücahit Kozak , Eby G. Friedman . IEEE , 2004 , 13 : 623 - 626 IEEE Wembe Tafo E , Su H , Gao Y , et al . Nucl Sci Tech , 2008 , 19 ( 4 ): 241 - 245 . Nucl Sci Tech Field Effect Transistors in Theory and Practice, Motorola Semiconductor Application Note AN211A , Motorola Inc ., 1993 , 1 - 2 . Field Effect Transistors in Theory and Practice, Motorola Semiconductor Application Note AN211A 10.13538/j.1001-8042/nst.21.312-315 Support by the Third World Academy of Sciences (TWAS), and the National Natural Science Foundation of China (No.10735060). 2010-03-23 2010-10-20 2021-01-19 2010 Nuclear Science and Techniques 05 21

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