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Oxygen gettering in Si by He ion implantation-induced cavity layer

LOW ENERGY ACCELERATORS AND RADIATION APPLICATIONS | 更新时间：2021-01-29

- Oxygen gettering in Si by He ion implantation-induced cavity layer 封面论文增强出版
- Oxygen gettering in Si by He ion implantation-induced cavity layer
- 核技术（英文版） 2009年 20卷第4期 (2009)
- 作者机构：
  
  State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences,Shanghai,China,200050
- 作者简介：
- 基金信息：
- DOI：10.13538/j.1001-8042/nst.20.202-207 中图分类号：
- 纸质出版日期：2009-08-20，
  
  网络出版日期：，
  
  收稿日期：2009-05-26，
  
  修回日期：，
  
  录用日期：
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引用本文
Xin OU, Bo ZHANG, Aimin WU, 等. Oxygen gettering in Si by He ion implantation-induced cavity layer[J]. 核技术（英文版）, 2009, 20(4):202-207.

Xin OU, Bo ZHANG, Aimin WU, et al. Oxygen gettering in Si by He ion implantation-induced cavity layer[J]. Nuclear Science and Techniques, 2009, 20(4):202-207.
Xin OU, Bo ZHANG, Aimin WU, 等. Oxygen gettering in Si by He ion implantation-induced cavity layer[J]. 核技术（英文版）, 2009, 20(4):202-207. DOI： 10.13538/j.1001-8042/nst.20.202-207.

Xin OU, Bo ZHANG, Aimin WU, et al. Oxygen gettering in Si by He ion implantation-induced cavity layer[J]. Nuclear Science and Techniques, 2009, 20(4):202-207. DOI： 10.13538/j.1001-8042/nst.20.202-207.

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Oxygen gettering in Si by He ion implantation-induced cavity layer 封面论文 增强出版

Oxygen gettering in Si by He ion implantation-induced cavity layer 封面论文增强出版