Ionizing radiation effect on 10-bit bipolar A/D converter

Rui CHEN; Wu LU; Diyuan REN; Yuzhan ZHENG; Yiyuan WANG; Wuxiong FEI; Maoshun LI; Bo LAN; Jiangwei CUI

doi:10.13538/j.1001-8042/nst.21.152-156

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Ionizing radiation effect on 10-bit bipolar A/D converter

LOW ENERGY ACCELERATORS AND RADIATION APPLICATIONS | 更新时间：2021-01-29

- Ionizing radiation effect on 10-bit bipolar A/D converter
- Ionizing radiation effect on 10-bit bipolar A/D converter
- 核技术（英文版） 2010年21卷第3期
- 作者机构：
  
  1.Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
  2.Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China
  3.Graduate University of Chinese Academy of Sciences, Beijing 100049, China
- 作者简介：
  
  Corresponding author. E-mail address: llyyth@sina.com
  
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- 基金信息：
- DOI：10.13538/j.1001-8042/nst.21.152-156 中图分类号：
- 纸质出版日期：2010-06-20，
  
  收稿日期：2010-03-24，
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引用本文
Rui CHEN, Wu LU, Diyuan REN, 等. Ionizing radiation effect on 10-bit bipolar A/D converter[J]. 核技术（英文版）, 2010, 21(3):152-156.

Rui CHEN, Wu LU, Diyuan REN, et al. Ionizing radiation effect on 10-bit bipolar A/D converter[J]. Nuclear Science and Techniques, 2010, 21(3):152-156.
Rui CHEN, Wu LU, Diyuan REN, 等. Ionizing radiation effect on 10-bit bipolar A/D converter[J]. 核技术（英文版）, 2010, 21(3):152-156. DOI： 10.13538/j.1001-8042/nst.21.152-156.

Rui CHEN, Wu LU, Diyuan REN, et al. Ionizing radiation effect on 10-bit bipolar A/D converter[J]. Nuclear Science and Techniques, 2010, 21(3):152-156. DOI： 10.13538/j.1001-8042/nst.21.152-156.

Ionizing radiation effect on 10-bit bipolar A/D converter 1 2 3 first-author 1 2 corresp Corresponding author. E-mail address: llyyth@sina.com Corresponding author. E-mail address: llyyth@sina.com llyyth@sina.com 1 2 1 2 3 1 2 3 1 2 3 1 2 3 1 2 3 1 2 3 Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011, China Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011, China Graduate University of Chinese Academy of Sciences, Beijing 100049, China Graduate University of Chinese Academy of Sciences, Beijing 100049, China In this article, radiation effects and annealing characteristics of a bipolar analog-to-digital converter (ADC) are investigated in different biases and dose rates. The results show that ADC is sensitive to both the bias and dose rate. Under high-dose-rate irradiation, the ADC functions well, while under low-dose-rate irradiation, the parameters of ADC change obviously at low dose level, and the damage is significant at zero bias. Combining the fringing field with the space charge model, the underlying mechanism for this response is discussed. Bipolar Analog to Digital converters 60 Co γ Radiation ELDRS Bias condition References Lee C I , Johnston A H . IEEE Trans Nucl Sci , 1998 , 45 ( 3 ): 1444 - 1449 IEEE Trans Nucl Sci Lee CI , Rax B G , Johnston A H . IEEE Radiation Effects Data Workshop , 1993 : 112 - 117 IEEE Radiation Effects Data Workshop Lee C I , Rax B G , Johnston A H . IEEE Trans Nucl Sci , 1994 , 41 : 2459 - 2466 IEEE Trans Nucl Sci Guo Qi , Ren Diyuan , Fan Long , et al . Nucl Tech , 1997 , 20 ( 1 ): 753 - 756 . (in Chinese) Nucl Tech Lee C I , Rax B C , Johnston AH . IEEE Trans. on Nucl. Sci , 1995 , 42 ( 6 ): 1681 - 1688 IEEE Trans. on Nucl. Sci Witczak S C , Schrimpf R D , Galloway K F , et al . IEEE Trans Nucl Sci , 1996 , 43 ( 6 ): 3151 - 3160 . IEEE Trans Nucl Sci Lu W , Ren D , Zheng Y , et al . J Semiconduc , 2008 , 29 ( 7 ): 1286 - 1291 . J Semiconduc Wang Y , Lu W , Ren D , et al . Atom Energy Sci Tech , 2009 , 43 ( 10 ): 951 - 955 . (in Chinese) Atom Energy Sci Tech Zhang H , Lu W , Ren D , et al . Microelectronics , 2008 , 34 ( 6 ): 606 - 608 . (in Chinese) Microelectronics Nowlin R N , Enlow E W , Schrimpf R D , et al . IEEE Trans Nucl Sci , 1992 , 39 ( 6 ): 2026 - 2035 . IEEE Trans Nucl Sci Schmidt D M , Wu A , Schrimpf R D , et al . IEEE Trans Nucl Sci , 1996 , 43 ( 6 ): 3032 - 3039 . IEEE Trans Nucl Sci Pershenkov V S , Maslov V B , Cherepko S V , et al . IEEE Trans Nucl Sci , 1997 , 44 ( 6 ): 1840 - 1848 . IEEE Trans Nucl Sci Lu W , Ren D , Guo Q , et al . J Semiconduc , 1998 , 19 ( 5 ): 374 - 380 . (in Chinese) J Semiconduc 10.13538/j.1001-8042/nst.21.152-156 2010-03-24 2010-06-20 2021-01-19 2010 Nuclear Science and Techniques 03 21

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