Electronic structure of In<sub>2</sub>O<sub>3</sub> nanowires synthesized at low temperature

Gang YUAN; Jing GAO; Xuhui SUN; Xingtai ZHOU

doi:10.13538/j.1001-8042/nst.22.272-276

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Electronic structure of In₂O₃ nanowires synthesized at low temperature

LOW ENERGY ACCELERATOR AND RADIATION APPLICATIONS | 更新时间：2021-01-29

- Electronic structure of In₂O₃ nanowires synthesized at low temperature
- Electronic structure of In₂O₃ nanowires synthesized at low temperature
- 核技术（英文版） 2011年22卷第5期
- 作者机构：
  
  1.Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China
  2.Institute of Functional Nano and Soft Materials, and Jiangsu Key Laboratory for Carbon-based Functional Materials and Devices, Soochow University, Suzhou 215123, China
- 作者简介：
  
  Corresponding author. E-mail address: xhsun@suda.edu.cn
  
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- 基金信息：
  
  National Basic Research Program of China;National Nature Science Foundation of China
- DOI：10.13538/j.1001-8042/nst.22.272-276 中图分类号：
- 纸质出版日期：2011-10-20，
  
  收稿日期：2011-03-09，
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Gang YUAN, Jing GAO, Xuhui SUN, 等. Electronic structure of In₂O₃ nanowires synthesized at low temperature[J]. 核技术（英文版）, 2011, 22(5):272-276.

Gang YUAN, Jing GAO, Xuhui SUN, et al. Electronic structure of In₂O₃ nanowires synthesized at low temperature[J]. Nuclear Science and Techniques, 2011, 22(5):272-276.
Gang YUAN, Jing GAO, Xuhui SUN, 等. Electronic structure of In₂O₃ nanowires synthesized at low temperature[J]. 核技术（英文版）, 2011, 22(5):272-276. DOI： 10.13538/j.1001-8042/nst.22.272-276.

Gang YUAN, Jing GAO, Xuhui SUN, et al. Electronic structure of In₂O₃ nanowires synthesized at low temperature[J]. Nuclear Science and Techniques, 2011, 22(5):272-276. DOI： 10.13538/j.1001-8042/nst.22.272-276.

Electronic structure of In 2 O 3 nanowires synthesized at low temperature 1 2 first-author 2 2 corresp Corresponding author. E-mail address: xhsun@suda.edu.cn Corresponding author. E-mail address: xhsun@suda.edu.cn xhsun@suda.edu.cn 1 Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China Institute of Functional Nano and Soft Materials, and Jiangsu Key Laboratory for Carbon-based Functional Materials and Devices, Soochow University, Suzhou 215123, China Institute of Functional Nano and Soft Materials, and Jiangsu Key Laboratory for Carbon-based Functional Materials and Devices, Soochow University, Suzhou 215123, China In 2 O 3 nanowires with uniform morphology and single crystalline structure were synthesized at low temperature of 400ºC~450ºC using InSb as the precursor via VLS mechanism. The nanowires have uniform diameter of about 40 nm and are up to tens of micrometres in length and grew along the [100] direction as established by high resolution electron microscopy. The electronic and local structures of In 2 O 3 nanowires, compared to that of In 2 O 3 powder, have been studied with X-ray absorption fine structure (XAFS) at In K-edge and O K-edge. The XAFS results reveal the stronger In-O bonding in In 2 O 3 nanowires compared to bulk In 2 O 3 . In 2 O 3 nanowires Low temperature synthesis XAFS Electronic structure References Huang M H , Wu Y Y , Feick H , et al . Adv Mater , 2001 , 13 : 113 - 116 . Adv Mater Yuan M R , Chu S Y , Chang R C . Sens Actuator B , 2007 , 122 : 269 - 273 . Sens Actuator B Zeng F H , Zhang X , Wang J , et al . Nanotechnology , 2004 , 15 : 596 - 600 . Nanotechnology Li C , Zhang D H , Liu X L , et al . Appl Phys Lett , 2003 , 82 : 1613 - 1615 . Appl Phys Lett Li C , Zhang D H , Han S , et al . Adv Mater , 2003 , 15 : 143 - 146 . Adv Mater Vomiero A , Bianchi S , Comini E , et al . Thin Solid Films 2007 , 515 : 8356 - 8359 . Thin Solid Films Li C , Zhang D H , Lei B , et al . J Phys Chem B , 2003 , 107 : 12451 - 12455 . J Phys Chem B Zhang D H , Liu Z Q , Li C , et al . Nano lett , 2004 , 4 : 1919 - 1924 . Nano lett Chu X F , Wang C H , Jiang D L , et al . Chem Phys Lett , 2004 , 399 : 461 - 464 . Chem Phys Lett Qurashia A , El-Maghraby E M , Yamazaki T , et al . J Alloys Compd , 2009 , 481 : L35 - L39 . J Alloys Compd Epifani M , Comini E , Arbiol J , et al . Sens Actuator B , 2008 , 130 : 483 - 487 . Sens Actuator B Jo G , Hong W K , Maeng J , et al . Colloids Surf A , 2008 , 313 : 308 - 311 . Colloids Surf A Wu X C , Hong J M , Han Z J , et al . Chem Phys Lett , 2003 , 373 : 28 - 32 . Chem Phys Lett Zhang Y F , Li J Y , Li Q , et al . Scripta Mater , 2007 , 56 : 409 - 412 . Scripta Mater Vomiero A , Bianchi S , Comini E , et al . Cryst Growth Des , 2007 , 7 : 2500 - 2504 . Cryst Growth Des Liang C H , Meng G W , Lei Y , et al . Adv Mater , 2001 , 13 : 1330 - 1333 . Adv Mater Liu Y K , Yang W G , Hou D D . Superlattices Microstruct , 2008 , 43 : 93 - 100 . Superlattices Microstruct Zhang J , Qing X , Jiang F H , et al . Chem Phys Lett , 2003 , 371 : 311 - 316 . Chem Phys Lett Jeong J S , Lee J Y , Lee C J , et al . Chem Phys Lett , 2004 , 384 : 246 - 250 . Chem Phys Lett Sham T K . Int J Nanotechnol , 2008 , 5 : 1194 - 1246 . Int J Nanotechnol Sun X H , Wang N B , Li C P , et al . Chem Mater , 2004 , 16 : 1143 - 1152 . Chem Mater Liu W E , Mohney S E . Mater Sci Eng B , 2003 , 103 : 189 - 201 . Mater Sci Eng B Prince A , Raynor G V , Evans D S . Phase Diagrams of Ternary Gold Alloys . London (UK) : Institute of Metal , 1990 , 480 - 483 . Phase Diagrams of Ternary Gold Alloys Hoel C A , Gaillard J -F , Poeppelmeier K R . J Solid State Chem , 2010 , 183 : 761 - 768 . J Solid State Chem McGuinness C , Stagarescu C B , Ryan P J , J.E. et al . Phys Rev B , 2003 , 68 : 165104-1-165104-10 . Phys Rev B 10.13538/j.1001-8042/nst.22.272-276 Supported by National Basic Research Program of China (973 program 2010CB934500) and National Nature Science Foundation of China (Grant No.: 51072127) 2011-03-09 2011-10-20 2021-01-19 2011 Nuclear Science and Techniques 05 22

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