Dose-rate effects of low-dropout voltage regulator at various biases

Yiyuan WANG; Wu LU; Diyuan REN; Yuzhan ZHENG; Bo GAO; Rui CHEN; Wuxiong FEI

doi:10.13538/j.1001-8042/nst.21.352-356

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Dose-rate effects of low-dropout voltage regulator at various biases

LOW ENERGY ACCELERATORS AND RADIATION APPLICATIONS | Updated：2021-01-29

- Dose-rate effects of low-dropout voltage regulator at various biases
- Nuclear Science and Techniques Vol. 21, Issue 6, (2010)
- Affiliations：
  
  1.Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China
  2.Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China
  3.Graduate University of Chinese Academy of Sciences, Beijing 100049, China
- Author bio：
  
  Corresponding author. E-mail address: luwu@ms.xjb.ac.cn
  
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- Funds：
- DOI：10.13538/j.1001-8042/nst.21.352-356 CLC：
- Published：20 December 2010，
  
  Received：27 May 2010，
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Cite this article
Yiyuan WANG, Wu LU, Diyuan REN, et al. Dose-rate effects of low-dropout voltage regulator at various biases. [J]. Nuclear Science and Techniques 21(6):352-356(2010)
DOI：

Yiyuan WANG, Wu LU, Diyuan REN, et al. Dose-rate effects of low-dropout voltage regulator at various biases. [J]. Nuclear Science and Techniques 21(6):352-356(2010) DOI： 10.13538/j.1001-8042/nst.21.352-356.

Dose-rate effects of low-dropout voltage regulator at various biases 1 2 3 first-author 1 2 corresp Corresponding author. E-mail address: luwu@ms.xjb.ac.cn Corresponding author. E-mail address: luwu@ms.xjb.ac.cn luwu@ms.xjb.ac.cn 1 2 1 2 3 1 2 3 1 2 3 1 2 3 Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China Xinjiang Technical Institute of Physics & Chemistry, Chinese Academy of Sciences, Urumqi 830011, China Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi 830011, China Graduate University of Chinese Academy of Sciences, Beijing 100049, China Graduate University of Chinese Academy of Sciences, Beijing 100049, China A low-dropout voltage regulator, LM2941, was irradiated by 60 Co γ -rays at various dose rates and biases for investigating the total dose and dose rate effects. The radiation responses show that the key electrical parameters, including its output and dropout voltage, and the maximum output current, are sensitive to total dose and dose rates, and are significantly degraded at low dose rate and zero bias. The integrated circuits damage change with the dose rates and biases, and the dose-rate effects are relative to its electric field. Dose rate effects ELDRS Ionizing radiation LDO voltage regulator References Pease R L , McClure S , Gorelick J , et al . IEEE Trans Nucl Sci , 1998 , 45 : 2571 - 2575 . IEEE Trans Nucl Sci Ramachandran V , Narasimham B , Fleetwood D M , et al . IEEE Trans Nucl Sci , 2006 , 53 : 3223 - 3231 . IEEE Trans Nucl Sci Beacour J T , Carriere T , Gach A , et al . IEEE Trans Nucl Sci , 1994 , 41 : 2420 - 2426 . IEEE Trans Nucl Sci Abare W , Brueggeman F , Pease R , et al . 2002 IEEE Radiation Effects Data Workshop Record . 2002 , 1 - 5 . 2002 IEEE Radiation Effects Data Workshop Record Freitag R K , Brown D B . IEEE Trans Nucl Sci , 1997 , 44 : 1906 - 1913 . IEEE Trans Nucl Sci Fleetwood D M , Riewe L C , Schwank J R , et al . IEEE Trans Nucl Sci , 1996 , 43 : 2537 - 2546 . IEEE Trans Nucl Sci Witczak S C , Lacoe R C , Mayer D C , et al . IEEE Trans Nucl Sci , 1998 , 45 : 2339 - 2351 . IEEE Trans Nucl Sci Fleetwood D M , Kosier S L , Nowlin R N , et al . IEEE Trans Nucl Sci , 1994 , 41 : 1871 - 1883 . IEEE Trans Nucl Sci Rashkeev S C , Schrimpf R D , Fleetwood D M , et al . IEEE Trans Nucl Sci , 2002 , 49 : 2650 - 2655 . IEEE Trans Nucl Sci Witczak S C , Schrimpf R D , Fleetwood D M , et al . IEEE Trans Nucl Sci , 1997 , 44 : 1989 - 2000 . IEEE Trans Nucl Sci Zheng Yu , Lu W , Ren D , et al . Nucl Tech , 2008 , 31 : 270 - 274 . (in Chinese) Nucl Tech Boch J , Saigne F , Schrimpf R D , et al . IEEE Trans Nucl Sci , 2006 , 53 : 3655 - 3660 . IEEE Trans Nucl Sci 10.13538/j.1001-8042/nst.21.352-356 2010-05-27 2010-12-20 2021-01-19 2010 Nuclear Science and Techniques 06 21

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