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Obtaining low energy γ dose with CMOS sensors

NUCLEAR ELECTRONICS AND INSTRUMENTATION | 更新时间：2021-01-20

- Obtaining low energy γ dose with CMOS sensors 封面论文增强出版
- Obtaining low energy γ dose with CMOS sensors
- 核技术（英文版） 2014年 25卷第6期 (2014)
- 作者机构：
  
  College of Physics and Electrical Engineering, Henan Normal University,Xinxiang,China,453007;Department of Information Science and Engineering, Wanfang College of Science and Technology HPU,Zhengzhou,China,451400
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China (NSFC) Projects;Science and Technology Innovation Team Support Plan in Henan Province
- DOI：10.13538/j.1001-8042/nst.25.060401 中图分类号：
- 纸质出版日期：2014-12-20，
  
  网络出版日期：2014-12-09，
  
  收稿日期：2014-04-10，
  
  修回日期：，
  
  录用日期：2014-05-15
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引用本文
王芳, 王明远, 刘玉芳, 等. Obtaining low energy γ dose with CMOS sensors[J]. 核技术（英文版）, 2014, 25(6):060401

Fang WANG, Ming-Yuan WANG, Yu-Fang LIU, et al. Obtaining low energy γ dose with CMOS sensors[J]. Nuclear Science and Techniques, 2014, 25(6):060401
王芳, 王明远, 刘玉芳, 等. Obtaining low energy γ dose with CMOS sensors[J]. 核技术（英文版）, 2014, 25(6):060401 DOI： 10.13538/j.1001-8042/nst.25.060401.

Fang WANG, Ming-Yuan WANG, Yu-Fang LIU, et al. Obtaining low energy γ dose with CMOS sensors[J]. Nuclear Science and Techniques, 2014, 25(6):060401 DOI： 10.13538/j.1001-8042/nst.25.060401.

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Obtaining low energy γ dose with CMOS sensors 封面论文 增强出版

Obtaining low energy γ dose with CMOS sensors 封面论文增强出版