童腾; 王晓辉; 张战刚; 丁朋程; 刘杰; 刘天奇; 苏弘

doi:10.13538/j.1001-8042/nst.25.010405

您当前的位置：

首页 >

文章列表页 >

Effectiveness and failure modes of error correcting code in industrial 65 nm CMOS SRAMs exposed to heavy ions

NUCLEAR ELECTRONICS AND INSTRUMENTATION | 更新时间：2021-01-20

- Effectiveness and failure modes of error correcting code in industrial 65 nm CMOS SRAMs exposed to heavy ions 封面论文增强出版
- Effectiveness and failure modes of error correcting code in industrial 65 nm CMOS SRAMs exposed to heavy ions
- 核技术（英文版） 2014年 25卷第1期 (2014)
- 作者机构：
  
  Institute of Modern Physics, Chinese Academy of Science,Lanzhou,China,730000;University of Chinese Academy of Sciences,Beijing,China,100049;Northwest Normal University,Lanzhou,China,730000
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China;Important Direction Project of the CAS Knowledge Innovation Program
- DOI：10.13538/j.1001-8042/nst.25.010405 中图分类号：
- 纸质出版日期：2014-02-20，
  
  网络出版日期：2014-02-20，
  
  收稿日期：2013-07-23，
  
  修回日期：，
  
  录用日期：2013-10-08
扫描看全文
引用本文
童腾, 王晓辉, 张战刚, 等. Effectiveness and failure modes of error correcting code in industrial 65 nm CMOS SRAMs exposed to heavy ions[J]. 核技术（英文版）, 2014, 25(1):010405

Teng TONG, Xiao-Hui WANG, Zhan-Gang ZHANG, et al. Effectiveness and failure modes of error correcting code in industrial 65 nm CMOS SRAMs exposed to heavy ions[J]. Nuclear Science and Techniques, 2014, 25(1):010405
童腾, 王晓辉, 张战刚, 等. Effectiveness and failure modes of error correcting code in industrial 65 nm CMOS SRAMs exposed to heavy ions[J]. 核技术（英文版）, 2014, 25(1):010405 DOI： 10.13538/j.1001-8042/nst.25.010405.

Teng TONG, Xiao-Hui WANG, Zhan-Gang ZHANG, et al. Effectiveness and failure modes of error correcting code in industrial 65 nm CMOS SRAMs exposed to heavy ions[J]. Nuclear Science and Techniques, 2014, 25(1):010405 DOI： 10.13538/j.1001-8042/nst.25.010405.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

暂无数据

Effectiveness and failure modes of error correcting code in industrial 65 nm CMOS SRAMs exposed to heavy ions 封面论文 增强出版

Effectiveness and failure modes of error correcting code in industrial 65 nm CMOS SRAMs exposed to heavy ions 封面论文增强出版