Selective growth of diamond by hot filament CVD using patterned carbon film as mask

Selective growth of diamond by hot filament CVD using patterned carbon film as mask 1 2 first-author 1 2 1 2 1 1 corresp Corresponding author. E-mail address: gongjinlong@sinap.ac.cn Corresponding author. E-mail address: gongjinlong@sinap.ac.cn gongjinlong@sinap.ac.cn Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China Graduate School of Chinese Academy of Sciences, Beijing 100049, China Graduate School of Chinese Academy of Sciences, Beijing 100049, China Selected-area deposition (SAD) of diamond films was achieved on silicon substrates with carbon film mask by hot filament chemical vapor deposition. Needle tip scraped lines were used to grow diamond films. Scanning electron microscope (SEM) investigation demonstrates that highly selective and sharp edged diamond films were produced. The results also demonstrate that the proper substrate temperature is very important for diamond selective growth in this deposition process. Since the enhancement of diamond growth was not observed on the needle tip scraped area of Si wafer with diamond powder scratching, the selective growth was considered to be closely correlated to silicon carbide formed during carbon film deposition and the residual carbon in the scraped area. Diamond film Selective deposition Hot filament CVD Carbon mask References Isberg J , Hammersberg J , Johansson E , et al . Science , 2002 , 297 : 1670 - 1672 . Science Graebner J E , Jin S , Kammlott G W , et al . Appl Phys Lett , 1992 , 60 : 1576 - 1578 . Appl Phys Lett Liu H W , Gao C X , Li X , et al . Diam Relat Mater , 2001 , 10 : 1573 - 1577 . Diam Relat Mater Takayoshi I , Hiroyuki T , Kazuo K , et al . J Appl Phys , 1990 , 67 : 7329 - 7336 . J Appl Phys Hirabayashi K , Taniguchi Y , Takamatsu O , et al . Appl Phys Lett , 1988 , 53 : 1815 - 1817 . Appl Phys Lett Narayan J , Chen X . J Appl Phys , 1992 , 71 : 3795 - 3801 . J Appl Phys Davidson J L , Ellis C , Ramesham R . J Electron Mater , 1989 , 18 : 711 - 715 . J Electron Mater Harris S J , Weiner A M , Prawer S , et al . J Appl Phys , 1996 , 80 : 2187 - 2194 . J Appl Phys Ferrari A C , Robertson J , Phys Rev B , 2000 , 61 : 14095 - 14107 . Phys Rev B Lifshitz Y , Kohler T , Frauenheim T , et al . Science , 2002 , 297 : 1531 - 1533 . Science Lifshitz Y , Meng X M , Lee S T , et al . Phys Rev Lett . 2004 , 93 : 056101-1-056101-4 . Phys Rev Lett Paul N B , Richard L , Wu C , Appl Phys Lett , 1993 , 62 : 37 - 39 . Appl Phys Lett Trevor C , Cherns D , Southworth P . TEM Studies of the Nucleation of CVD Diamond on Silicon . Proceedings of Institute of Physics Electron Microscopy and Analysis Group Conference , Bristol, UK , 1991 . TEM Studies of the Nucleation of CVD Diamond on Silicon Feng Z , Komvopoulos K , Brown I G , et al . J Appl Phys , 1993 , 74 : 2841 - 2849 . J Appl Phys Iijima S , Aikawa Y , Baba K , J Mater Res , 1991 , 6 : 1491 - 1497 . J Mater Res Paul A D , Stevenson A D . Appl Phys Lett , 1991 , 59 : 1562 - 1564 . Appl Phys Lett Suzuki T , Yagi M , Shibuki K , et al . Appl Phys Lett , 1994 , 65 : 540 - 542 . Appl Phys Lett Lambrecht W R L , Lee C H , Segall B , et al . Nature , 1993 , 364 : 607 - 610 . Nature Arnault J C , Saada S , Delclos S , et al . Diam Relat Mater , 2007 , 16 : 690 - 694 . Diam Relat Mater Jungheum Y T , Dandy D S . Diam Relat Mater , 2005 , 14 : 1377 - 1388 . Diam Relat Mater Chiang M J , Hon M H . J Cryst Growth 2000 , 211 : 211 - 215 . J Cryst Growth 10.1016/S1001-8042(08)60028-7 TN304.1 + 8,TN304.055 Supported by the Key Project of Chinese Academy of Sciences Knowledge Innovation Program (Grant No. KJCX3. SYW. N10) 2008-02-21 2008-04-20 2021-01-19 2008 Nuclear Science and Techniques 02 19