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Electron-induced damage to NPN transistors under different fluxes

LOW ENERGY ACCELERATOR, RAY TECHNOLOGY AND APPLICATIONS | Updated：2021-01-29

- Electron-induced damage to NPN transistors under different fluxes Cover Article Enhanced Publication
- Nuclear Science and Techniques Vol.19, Issue 6, (2008)
- Affiliations：
  
  Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences,Urumqi,China,830011;Graduate School of Chinese Academy of Sciences,Beijing,China,100049
- Author bio：
- Funds：
- DOI：10.1016/S1001-8042(09)60014-2 CLC： TN322⁺.8,O47
- Published：20 December 2008，
  
  Published Online：，
  
  Received：05 June 2008，
  
  Revised：，
  
  Accepted：
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Cite this article
Yuzhan ZHENG, Wu LU, Diyuan REN, et al. Electron-induced damage to NPN transistors under different fluxes. [J]. Nuclear Science and Techniques 19(6):333-336(2008)
DOI：

Yuzhan ZHENG, Wu LU, Diyuan REN, et al. Electron-induced damage to NPN transistors under different fluxes. [J]. Nuclear Science and Techniques 19(6):333-336(2008) DOI： 10.1016/S1001-8042(09)60014-2.

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Electron-induced damage to NPN transistors under different fluxes Cover Article Enhanced Publication