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Electron-induced damage to NPN transistors under different fluxes

LOW ENERGY ACCELERATOR, RAY TECHNOLOGY AND APPLICATIONS | 更新时间：2021-01-29

- Electron-induced damage to NPN transistors under different fluxes 封面论文增强出版
- Electron-induced damage to NPN transistors under different fluxes
- 核技术（英文版） 2008年 19卷第6期 (2008)
- 作者机构：
  
  Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences,Urumqi,China,830011;Graduate School of Chinese Academy of Sciences,Beijing,China,100049
- 作者简介：
- 基金信息：
- DOI：10.1016/S1001-8042(09)60014-2 中图分类号： TN322⁺.8,O47
- 纸质出版日期：2008-12-20，
  
  网络出版日期：，
  
  收稿日期：2008-06-05，
  
  修回日期：，
  
  录用日期：
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Yuzhan ZHENG, Wu LU, Diyuan REN, 等. Electron-induced damage to NPN transistors under different fluxes[J]. 核技术（英文版）, 2008, 19(6):333-336.

Yuzhan ZHENG, Wu LU, Diyuan REN, et al. Electron-induced damage to NPN transistors under different fluxes[J]. Nuclear Science and Techniques, 2008, 19(6):333-336.
Yuzhan ZHENG, Wu LU, Diyuan REN, 等. Electron-induced damage to NPN transistors under different fluxes[J]. 核技术（英文版）, 2008, 19(6):333-336. DOI： 10.1016/S1001-8042(09)60014-2.

Yuzhan ZHENG, Wu LU, Diyuan REN, et al. Electron-induced damage to NPN transistors under different fluxes[J]. Nuclear Science and Techniques, 2008, 19(6):333-336. DOI： 10.1016/S1001-8042(09)60014-2.

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Electron-induced damage to NPN transistors under different fluxes 封面论文 增强出版

Electron-induced damage to NPN transistors under different fluxes 封面论文增强出版