XAFS applications in semiconductors

XAFS applications in semiconductors 1 corresp first-author Correspondent author, E-mail: sqwei@ustc.edu.cn Correspondent author, E-mail: sqwei@ustc.edu.cn sqwei@ustc.edu.cn 1 1 2 1 1 National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China; National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China; Department of Physics, Surface Physics Laboratory (National Key Laboratory), and Synchrotron Radiation Research Center, Fudan University, Shanghai 200433, China Department of Physics, Surface Physics Laboratory (National Key Laboratory), and Synchrotron Radiation Research Center, Fudan University, Shanghai 200433, China X-ray absorption fine structure (XAFS) has experienced a rapid development in the last three decades and has proven to be a powerful structural characterization technique nowadays. In this review, the XAFS basic principles including the theory, the data analysis, and the experiments have been introduced in detail. To show its strength as a local structure probe, the XAFS applications in semiconductors are summarized comprehensively, that is, thin films, quantum wells and dots, dilute magnetic semiconductors, and so on. In addition, certain new XAFS-related techniques, such as in-situ XAFS, micro-XAFS, and time-resolved XAFS are also shown. X-ray absorption fine structure (XAFS) Local structures Semiconductor quantum system Synchrotron radiation References Koningsberger D C , Prins R , X-ray absorption: Principles, applications, techniques of EXAFS, SEXAFS, and XANES , New York : John Wiley , 1988 . X-ray absorption: Principles, applications, techniques of EXAFS, SEXAFS, and XANES Fricke H , Phys. Rev . 1920 , 16 : 202 ; Phys. Rev Hertz G Z , Phys . 1920 , 3 : 19 . Phys Kronig R , Del Z , Phys . 1931 , 70 : 317 . Phys Kronig R , Del Z , Phys . 1932 , 75 : 468 . 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