Chang-Chun CHEN; Ben-Hai YU; Jiang-Feng LIU; Jian-Qing CAO; De-Zhang ZHU

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Thin relaxed SiGe layer grown on Ar+ ion implanted Si substrate by ultra-high vacuum chemical vapor deposition

LOW ENERGY ACCELERATOR, RAY TECHNOLOGY AND APPLICATIONS | Updated：2021-01-29

- Thin relaxed SiGe layer grown on Ar+ ion implanted Si substrate by ultra-high vacuum chemical vapor deposition Cover Article Enhanced Publication
- Nuclear Science and Techniques Vol.16, Issue 3, (2005)
- Affiliations：
  
  College of Physics and Electronic Engineering, Xinyang Normal University,Xinyang,464000;Shanghai Institute of Applied Physics, the Chinese Academy of Sciences,Shanghai,201800
- Author bio：
- Funds：
- DOI： CLC： TN32
- Published：01 June 2005，
  
  Published Online：，
  
  Received：17 December 2004，
  
  Revised：，
  
  Accepted：
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Cite this article
Chang-Chun CHEN, Ben-Hai YU, Jiang-Feng LIU, et al. Thin relaxed SiGe layer grown on Ar+ ion implanted Si substrate by ultra-high vacuum chemical vapor deposition. [J]. Nuclear Science and Techniques 16(3):149-152(2005)
DOI：

Chang-Chun CHEN, Ben-Hai YU, Jiang-Feng LIU, et al. Thin relaxed SiGe layer grown on Ar+ ion implanted Si substrate by ultra-high vacuum chemical vapor deposition. [J]. Nuclear Science and Techniques 16(3):149-152(2005) DOI：

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Thin relaxed SiGe layer grown on Ar+ ion implanted Si substrate by ultra-high vacuum chemical vapor deposition Cover Article Enhanced Publication