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Effect of hydrogen on SiC-C films with AES and XPS analyses

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- Effect of hydrogen on SiC-C films with AES and XPS analyses 封面论文增强出版
- Effect of hydrogen on SiC-C films with AES and XPS analyses
- 核技术（英文版） 2003年 14卷第1期 (2003)
- 作者机构：
  
  Lab. for Radiation Physics and Technology of Education Ministry of China, Institute of Nuclear Science and Technology, Sichuan University,Chengdu,610064
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China
- DOI：中图分类号： TQ163,O484.5
- 纸质出版日期：2003-02-01，
  
  网络出版日期：，
  
  收稿日期：2002-10-14，
  
  修回日期：，
  
  录用日期：
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Ning-Kang HUANG, Bin YANG, Qi XIONG, 等. Effect of hydrogen on SiC-C films with AES and XPS analyses[J]. 核技术（英文版）, 2003, 14(1):56-59.

Ning-Kang HUANG, Bin YANG, Qi XIONG, et al. Effect of hydrogen on SiC-C films with AES and XPS analyses[J]. Nuclear Science and Techniques, 2003, 14(1):56-59.
Ning-Kang HUANG, Bin YANG, Qi XIONG, 等. Effect of hydrogen on SiC-C films with AES and XPS analyses[J]. 核技术（英文版）, 2003, 14(1):56-59. DOI：

Ning-Kang HUANG, Bin YANG, Qi XIONG, et al. Effect of hydrogen on SiC-C films with AES and XPS analyses[J]. Nuclear Science and Techniques, 2003, 14(1):56-59. DOI：

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Effect of hydrogen on SiC-C films with AES and XPS analyses 封面论文 增强出版

Effect of hydrogen on SiC-C films with AES and XPS analyses 封面论文增强出版