Ming ZHU; Qing LIN; Xiang-Hua LIU; Zi-Xin LIN; Zheng-Xuan ZHANG; Cheng-Lu LIN

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Reduction of self-heating effect in SOI MOSFET by forming a new buried layer structure

LOW ENERGY ACCELERATOR, RAY TECHNOLOGY AND APPLICATIONS | 更新时间：2021-01-29

- Reduction of self-heating effect in SOI MOSFET by forming a new buried layer structure 封面论文增强出版
- Reduction of self-heating effect in SOI MOSFET by forming a new buried layer structure
- 核技术（英文版） 2003年 14卷第2期 (2003)
- 作者机构：
  
  State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, the Chinese Academy of Sciences,Shanghai,200050
- 作者简介：
- 基金信息：
  
  Special Funds for Major State Basic Research Projects;National Natural Science Foundation of China
- DOI：中图分类号： TN305.3,TN403
- 纸质出版日期：2003-05-01，
  
  网络出版日期：，
  
  收稿日期：2002-09-17，
  
  修回日期：，
  
  录用日期：
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引用本文
Ming ZHU, Qing LIN, Xiang-Hua LIU, 等. Reduction of self-heating effect in SOI MOSFET by forming a new buried layer structure[J]. 核技术（英文版）, 2003, 14(2):119-122.

Ming ZHU, Qing LIN, Xiang-Hua LIU, et al. Reduction of self-heating effect in SOI MOSFET by forming a new buried layer structure[J]. Nuclear Science and Techniques, 2003, 14(2):119-122.
Ming ZHU, Qing LIN, Xiang-Hua LIU, 等. Reduction of self-heating effect in SOI MOSFET by forming a new buried layer structure[J]. 核技术（英文版）, 2003, 14(2):119-122. DOI：

Ming ZHU, Qing LIN, Xiang-Hua LIU, et al. Reduction of self-heating effect in SOI MOSFET by forming a new buried layer structure[J]. Nuclear Science and Techniques, 2003, 14(2):119-122. DOI：

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Reduction of self-heating effect in SOI MOSFET by forming a new buried layer structure 封面论文 增强出版

Reduction of self-heating effect in SOI MOSFET by forming a new buried layer structure 封面论文增强出版