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A novel single event upset reversal in 40-nm bulk CMOS 6 T SRAM cells

NUCLEAR ELECTRONICS AND INSTRUMENTATION | Updated：2021-01-20

- A novel single event upset reversal in 40-nm bulk CMOS 6 T SRAM cells Cover Article Enhanced Publication
- Nuclear Science and Techniques Vol.26, Issue 5, (2015)
- Affiliations：
  
  College of Computer, National University of Defense Technology,Changsha,China,410073
- Author bio：
- Funds：
- DOI：10.13538/j.1001-8042/nst.26.050405 CLC：
- Published：20 October 2015，
  
  Published Online：20 October 2015，
  
  Received：03 March 2015，
  
  Revised：，
  
  Accepted：14 May 2015
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Cite this article
Peng LI, Min-Xuan ZHANG, Zhen-Yu ZHAO, et al. A novel single event upset reversal in 40-nm bulk CMOS 6 T SRAM cells. [J]. Nuclear Science and Techniques 26(5):050405(2015)
DOI：

Peng LI, Min-Xuan ZHANG, Zhen-Yu ZHAO, et al. A novel single event upset reversal in 40-nm bulk CMOS 6 T SRAM cells. [J]. Nuclear Science and Techniques 26(5):050405(2015) DOI： 10.13538/j.1001-8042/nst.26.050405.

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A novel single event upset reversal in 40-nm bulk CMOS 6 T SRAM cells Cover Article Enhanced Publication