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A novel single event upset reversal in 40-nm bulk CMOS 6 T SRAM cells

NUCLEAR ELECTRONICS AND INSTRUMENTATION | 更新时间：2021-01-20

- A novel single event upset reversal in 40-nm bulk CMOS 6 T SRAM cells 封面论文增强出版
- A novel single event upset reversal in 40-nm bulk CMOS 6 T SRAM cells
- 核技术（英文版） 2015年 26卷第5期 (2015)
- 作者机构：
  
  College of Computer, National University of Defense Technology,Changsha,China,410073
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China;Specialized Research Fund for the Doctor Program of Higher Education of China
- DOI：10.13538/j.1001-8042/nst.26.050405 中图分类号：
- 纸质出版日期：2015-10-20，
  
  网络出版日期：2015-10-20，
  
  收稿日期：2015-03-03，
  
  修回日期：，
  
  录用日期：2015-05-14
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引用本文
李鹏, 张民选, 赵振宇, 等. A novel single event upset reversal in 40-nm bulk CMOS 6 T SRAM cells[J]. 核技术（英文版）, 2015, 26(5):050405

Peng LI, Min-Xuan ZHANG, Zhen-Yu ZHAO, et al. A novel single event upset reversal in 40-nm bulk CMOS 6 T SRAM cells[J]. Nuclear Science and Techniques, 2015, 26(5):050405
李鹏, 张民选, 赵振宇, 等. A novel single event upset reversal in 40-nm bulk CMOS 6 T SRAM cells[J]. 核技术（英文版）, 2015, 26(5):050405 DOI： 10.13538/j.1001-8042/nst.26.050405.

Peng LI, Min-Xuan ZHANG, Zhen-Yu ZHAO, et al. A novel single event upset reversal in 40-nm bulk CMOS 6 T SRAM cells[J]. Nuclear Science and Techniques, 2015, 26(5):050405 DOI： 10.13538/j.1001-8042/nst.26.050405.

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A novel single event upset reversal in 40-nm bulk CMOS 6 T SRAM cells 封面论文 增强出版

A novel single event upset reversal in 40-nm bulk CMOS 6 T SRAM cells 封面论文增强出版