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Azimuthal dependence of single-event and multiple-bit upsets in SRAM devices with anisotropic layout

NUCLEAR ELECTRONICS AND INSTRUMENTATION | Updated：2021-01-20

- Azimuthal dependence of single-event and multiple-bit upsets in SRAM devices with anisotropic layout Cover Article Enhanced Publication
- Nuclear Science and Techniques Vol.26, Issue 5, (2015)
- Affiliations：
  
  Institute of Modern Physics, Chinese Academy of Sciences,Lanzhou,China,730000;University of Chinese Academy of Sciences,Beijing,China,100049;Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute,Guangzhou,China,510610
- Author bio：
- Funds：
- DOI：10.13538/j.1001-8042/nst.26.050404 CLC：
- Published：20 October 2015，
  
  Published Online：20 October 2015，
  
  Received：30 August 2014，
  
  Revised：，
  
  Accepted：23 September 2014
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Cite this article
Zhan-Gang ZHANG, Jie LIU, Ming-Dong HOU, et al. Azimuthal dependence of single-event and multiple-bit upsets in SRAM devices with anisotropic layout. [J]. Nuclear Science and Techniques 26(5):050404(2015)
DOI：

Zhan-Gang ZHANG, Jie LIU, Ming-Dong HOU, et al. Azimuthal dependence of single-event and multiple-bit upsets in SRAM devices with anisotropic layout. [J]. Nuclear Science and Techniques 26(5):050404(2015) DOI： 10.13538/j.1001-8042/nst.26.050404.

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Azimuthal dependence of single-event and multiple-bit upsets in SRAM devices with anisotropic layout Cover Article Enhanced Publication