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Influence of channel length and layout on TID for 0.18 μm NMOS transistors

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- Influence of channel length and layout on TID for 0.18 μm NMOS transistors Cover Article Enhanced Publication
- Nuclear Science and Techniques Vol.24, Issue 6, (2013)
- Affiliations：
  
  Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, ChineseAcademy of Sciences,Urumqi,China,830011;Xinjiang Key Laboratory of Electronic Information Material and Device,Urumqi,China,830011;Graduate University of Chinese Academy of Sciences,Beijing,China,100049
- Author bio：
- Funds：
- DOI：10.13538/j.1001-8042/nst.2013.06.019 CLC：
- Published：01 December 2013，
  
  Published Online：，
  
  Received：18 January 2013，
  
  Revised：，
  
  Accepted：
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Cite this article
Xue WU, Wu LU, Xin WANG, et al. Influence of channel length and layout on TID for 0.18 μm NMOS transistors. [J]. Nuclear Science and Techniques 24(6):060202(2013)
DOI：

Xue WU, Wu LU, Xin WANG, et al. Influence of channel length and layout on TID for 0.18 μm NMOS transistors. [J]. Nuclear Science and Techniques 24(6):060202(2013) DOI： 10.13538/j.1001-8042/nst.2013.06.019.

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