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Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs

NUCLEAR ELECTRONICS AND INSTRUMENTATION | Updated：2021-02-01

- Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs Cover Article Enhanced Publication
- Nuclear Science and Techniques Vol.30, Issue 5, (2019)
- Affiliations：
  
  Institute of Modern Physics, Chinese Academy of Sciences,Lanzhou,China,730000;University of Chinese Academy of Sciences,Beijing,China,100049;School of Physical Science and Technology, Lanzhou University,Lanzhou,China,730000;Academy of Shenzhen State Microelectronic Co., Ltd.,Shenzhen,China,518004;Science and Technology on Reliability Physics and Application of Electronic Component Laboratory,Guangzhou,China,510610
- Author bio：
- Funds：
- DOI：10.1007/s41365-019-0602-6 CLC：
- Published：01 May 2019，
  
  Published Online：13 April 2019，
  
  Received：08 August 2018，
  
  Revised：10 October 2018，
  
  Accepted：20 October 2018
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Cite this article
Chang Cai, Tian-Qi Liu, Xiao-Yuan Li, et al. Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs. [J]. Nuclear Science and Techniques 30(5):80(2019)
DOI：

Chang Cai, Tian-Qi Liu, Xiao-Yuan Li, et al. Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs. [J]. Nuclear Science and Techniques 30(5):80(2019) DOI： 10.1007/s41365-019-0602-6.

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Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs Cover Article Enhanced Publication