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THE DAMAGE MEASUREMENT OF ION- IMPLANTED COMPOUND SEMICONDUCTOR GaAs BY PIXE- CHANNELING TECHNIQUE

更新时间：2021-02-05

- THE DAMAGE MEASUREMENT OF ION- IMPLANTED COMPOUND SEMICONDUCTOR GaAs BY PIXE- CHANNELING TECHNIQUE 封面论文增强出版
- THE DAMAGE MEASUREMENT OF ION- IMPLANTED COMPOUND SEMICONDUCTOR GaAs BY PIXE- CHANNELING TECHNIQUE
- 核技术（英文版） 1990年 1卷第3期 (1990)
- 作者机构：
  
  Shanghai Institute of Nuclear Research, Academia Sinica
- 作者简介：
- 基金信息：
- DOI：中图分类号：
- 纸质出版日期：1990-08-01，
  
  网络出版日期：，
  
  收稿日期：1989-11，
  
  修回日期：，
  
  录用日期：
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刘惠珍, 盛康龙, 朱德彰, 等. THE DAMAGE MEASUREMENT OF ION- IMPLANTED COMPOUND SEMICONDUCTOR GaAs BY PIXE- CHANNELING TECHNIQUE[J]. 核技术（英文版）, 1990, 1(3):156-160.

Huizhen Liu, Kanglong Sheng, Dezhang Zhu, et al. THE DAMAGE MEASUREMENT OF ION- IMPLANTED COMPOUND SEMICONDUCTOR GaAs BY PIXE- CHANNELING TECHNIQUE[J]. Nuclear Science and Techniques, 1990, 1(3):156-160.
刘惠珍, 盛康龙, 朱德彰, 等. THE DAMAGE MEASUREMENT OF ION- IMPLANTED COMPOUND SEMICONDUCTOR GaAs BY PIXE- CHANNELING TECHNIQUE[J]. 核技术（英文版）, 1990, 1(3):156-160. DOI：

Huizhen Liu, Kanglong Sheng, Dezhang Zhu, et al. THE DAMAGE MEASUREMENT OF ION- IMPLANTED COMPOUND SEMICONDUCTOR GaAs BY PIXE- CHANNELING TECHNIQUE[J]. Nuclear Science and Techniques, 1990, 1(3):156-160. DOI：

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THE DAMAGE MEASUREMENT OF ION- IMPLANTED COMPOUND SEMICONDUCTOR GaAs BY PIXE- CHANNELING TECHNIQUE 封面论文 增强出版

THE DAMAGE MEASUREMENT OF ION- IMPLANTED COMPOUND SEMICONDUCTOR GaAs BY PIXE- CHANNELING TECHNIQUE 封面论文增强出版