Shi-Yang Zhu; Yi-Ping Huang; Dong-Ping Wu; Jian-Xia Gao; Jin-Hua Li

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Total dose radiation characteristics of n-channel MOSFETs fabricated using FIPOS technology

Updated：2021-02-05

- Total dose radiation characteristics of n-channel MOSFETs fabricated using FIPOS technology Cover Article Enhanced Publication
- Nuclear Science and Techniques Vol.8, Issue 3, (1997)
- Affiliations：
  
  Department of Electronic Engineering, Fudan University,Shanghai,200433;Xinjiang Institute of Physics, the Chinese Academy of Sciences,Urumqi,830011;Jiangsu Petrochemical Industry College,Changzhou,213016
- Author bio：
- Funds：
- DOI： CLC：
- Published：01 August 1997，
  
  Published Online：，
  
  Received：03 December 1996，
  
  Revised：，
  
  Accepted：
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Cite this article
Shi-Yang Zhu, Yi-Ping Huang, Dong-Ping Wu, et al. Total dose radiation characteristics of n-channel MOSFETs fabricated using FIPOS technology. [J]. Nuclear Science and Techniques 8(3):170-173(1997)
DOI：

Shi-Yang Zhu, Yi-Ping Huang, Dong-Ping Wu, et al. Total dose radiation characteristics of n-channel MOSFETs fabricated using FIPOS technology. [J]. Nuclear Science and Techniques 8(3):170-173(1997) DOI：

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Total dose radiation characteristics of n-channel MOSFETs fabricated using FIPOS technology Cover Article Enhanced Publication