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Long range implantation by MEVVA metal ion source

更新时间：2021-02-05

- Long range implantation by MEVVA metal ion source 封面论文增强出版
- Long range implantation by MEVVA metal ion source
- 核技术（英文版） 2001年 12卷第1期 (2001)
- 作者机构：
  
  Key Laboratory in University for Radiation Beam Technology and Material modification, Institute of Low Energy Nuclear Physics, Beijing Normal University; Beijing Radiation Center,Beijing,100875
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation;863 High Technology Program
- DOI：中图分类号： O472, O483, TN305.3
- 纸质出版日期：2001-02-01，
  
  网络出版日期：，
  
  收稿日期：2000-10-23，
  
  修回日期：，
  
  录用日期：
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Tong-He ZHANG, Yu-Guang WU, Fu-Rong MA, 等. Long range implantation by MEVVA metal ion source[J]. 核技术（英文版）, 2001, 12(1):16-20.

Tong-He ZHANG, Yu-Guang WU, Fu-Rong MA, et al. Long range implantation by MEVVA metal ion source[J]. Nuclear Science and Techniques, 2001, 12(1):16-20.
Tong-He ZHANG, Yu-Guang WU, Fu-Rong MA, 等. Long range implantation by MEVVA metal ion source[J]. 核技术（英文版）, 2001, 12(1):16-20. DOI：

Tong-He ZHANG, Yu-Guang WU, Fu-Rong MA, et al. Long range implantation by MEVVA metal ion source[J]. Nuclear Science and Techniques, 2001, 12(1):16-20. DOI：

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Long range implantation by MEVVA metal ion source 封面论文 增强出版

Long range implantation by MEVVA metal ion source 封面论文增强出版