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Photoluminescence from neodymium silicide thin films formed by MEVVA ion source

Updated：2021-02-05

- Photoluminescence from neodymium silicide thin films formed by MEVVA ion source Cover Article Enhanced Publication
- Nuclear Science and Techniques Vol.12, Issue 1, (2001)
- Affiliations：
  
  Key Laboratory in University for Radiation Beam Technology and Materials Modification, Institute of Low Energy Nuclear Physics, Beijing Normal University; Beijing Radiation Center,Beijing,100875;Department of Materials Science and Engineering, Nanchang University,Nanchang,330047;Department of Physics, Nanchang University,Nanchang,330047
- Author bio：
- Funds：
- DOI： CLC： O484.4⁺1, TN305.3.TN304.3
- Published：01 February 2001，
  
  Published Online：，
  
  Received：14 December 99，
  
  Revised：，
  
  Accepted：
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Cite this article
Zhi-Song XIAO, Fei XU, Guo-An CHENG, et al. Photoluminescence from neodymium silicide thin films formed by MEVVA ion source. [J]. Nuclear Science and Techniques 12(1):21-25(2001)
DOI：

Zhi-Song XIAO, Fei XU, Guo-An CHENG, et al. Photoluminescence from neodymium silicide thin films formed by MEVVA ion source. [J]. Nuclear Science and Techniques 12(1):21-25(2001) DOI：

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Photoluminescence from neodymium silicide thin films formed by MEVVA ion source Cover Article Enhanced Publication