纸质出版日期:2001-08-01,
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收稿日期:2001-02-01,
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Zhi-Bin ZHANG, Shi-Li ZHANG, De-Zhang ZHU, 等. Annealing behavior of ultrathin Mo layer located at interface or on surface of Ti-Si system[J]. 核技术(英文版), 2001, 12(3):183-189.
Zhi-Bin ZHANG, Shi-Li ZHANG, De-Zhang ZHU, et al. Annealing behavior of ultrathin Mo layer located at interface or on surface of Ti-Si system[J]. Nuclear Science and Techniques, 2001, 12(3):183-189.
Zhi-Bin ZHANG, Shi-Li ZHANG, De-Zhang ZHU, 等. Annealing behavior of ultrathin Mo layer located at interface or on surface of Ti-Si system[J]. 核技术(英文版), 2001, 12(3):183-189. DOI:
Zhi-Bin ZHANG, Shi-Li ZHANG, De-Zhang ZHU, et al. Annealing behavior of ultrathin Mo layer located at interface or on surface of Ti-Si system[J]. Nuclear Science and Techniques, 2001, 12(3):183-189. DOI:
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