Zhi-Bin ZHANG; Shi-Li ZHANG; De-Zhang ZHU; Hong-Jie XU

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Annealing behavior of ultrathin Mo layer located at interface or on surface of Ti-Si system

更新时间：2021-02-05

- Annealing behavior of ultrathin Mo layer located at interface or on surface of Ti-Si system 封面论文增强出版
- Annealing behavior of ultrathin Mo layer located at interface or on surface of Ti-Si system
- 核技术（英文版） 2001年 12卷第3期 (2001)
- 作者机构：
  
  Laboratory of Nuclear Analyses and Techniques, Shanghai Institute of Nuclear Research, the Chinese Academy of Sciences,Shanghai,201800;Electrum,Kista,Sweden,164 40
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation
- DOI：中图分类号： TN304.1⁺2, TN304.2⁺6, TN305.3, O485
- 纸质出版日期：2001-08-01，
  
  网络出版日期：，
  
  收稿日期：2001-02-01，
  
  修回日期：，
  
  录用日期：
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Zhi-Bin ZHANG, Shi-Li ZHANG, De-Zhang ZHU, 等. Annealing behavior of ultrathin Mo layer located at interface or on surface of Ti-Si system[J]. 核技术（英文版）, 2001, 12(3):183-189.

Zhi-Bin ZHANG, Shi-Li ZHANG, De-Zhang ZHU, et al. Annealing behavior of ultrathin Mo layer located at interface or on surface of Ti-Si system[J]. Nuclear Science and Techniques, 2001, 12(3):183-189.
Zhi-Bin ZHANG, Shi-Li ZHANG, De-Zhang ZHU, 等. Annealing behavior of ultrathin Mo layer located at interface or on surface of Ti-Si system[J]. 核技术（英文版）, 2001, 12(3):183-189. DOI：

Zhi-Bin ZHANG, Shi-Li ZHANG, De-Zhang ZHU, et al. Annealing behavior of ultrathin Mo layer located at interface or on surface of Ti-Si system[J]. Nuclear Science and Techniques, 2001, 12(3):183-189. DOI：

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Annealing behavior of ultrathin Mo layer located at interface or on surface of Ti-Si system 封面论文 增强出版

Annealing behavior of ultrathin Mo layer located at interface or on surface of Ti-Si system 封面论文增强出版