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Strain in GaN/Si<111> by RBS/Channeling

更新时间：2021-02-05

- Strain in GaN/Si<111> by RBS/Channeling 封面论文增强出版
- Strain in GaN/Si<111> by RBS/Channeling
- 核技术（英文版） 2002年 13卷第1期 (2002)
- 作者机构：
  
  Laboratory of Nuclear Analyses and Techniques, Shanghai Institute of Nuclear Research, the Chinese Academy of Sciences,Shanghai,201800;Department of Technical Physics, Peking University,Beijing,100871
- 作者简介：
- 基金信息：
  
  National Natural Sciences Foundation of China
- DOI：中图分类号： O472⁺.91, O571.33, TN305
- 纸质出版日期：2002-02-01，
  
  网络出版日期：，
  
  收稿日期：2001-11-21，
  
  修回日期：，
  
  录用日期：
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Chang-Chun CHEN, Jian-Qing CAO, Ming-Fang WU, 等. Strain in GaN/Si<111> by RBS/Channeling[J]. 核技术（英文版）, 2002, 13(1):37-41.

Chang-Chun CHEN, Jian-Qing CAO, Ming-Fang WU, et al. Strain in GaN/Si<111> by RBS/Channeling[J]. Nuclear Science and Techniques, 2002, 13(1):37-41.
Chang-Chun CHEN, Jian-Qing CAO, Ming-Fang WU, 等. Strain in GaN/Si<111> by RBS/Channeling[J]. 核技术（英文版）, 2002, 13(1):37-41. DOI：

Chang-Chun CHEN, Jian-Qing CAO, Ming-Fang WU, et al. Strain in GaN/Si<111> by RBS/Channeling[J]. Nuclear Science and Techniques, 2002, 13(1):37-41. DOI：

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Strain in GaN/Si<111> by RBS/Channeling 封面论文 增强出版

Strain in GaN/Si<111> by RBS/Channeling 封面论文增强出版