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Analysis of Single-Event Transient Sensitivity in Fully-Depleted Silicon-on-Insulator MOSFETs

NUCLEAR ELECTRONICS AND INSTRUMENTATION | Updated：2021-02-07

- Analysis of Single-Event Transient Sensitivity in Fully-Depleted Silicon-on-Insulator MOSFETs Cover Article Enhanced Publication
- Nuclear Science and Techniques Vol.29, Issue 4, (2018)
- Affiliations：
  
  College of Computer, National University of Defense Technology,Changsha,China,410073;National Laboratory for Parallel and Distributed Processing, National University of Defense Technology,Changsha,China,410073
- Author bio：
- Funds：
- DOI：10.1007/s41365-018-0391-3 CLC：
- Published：01 April 2018，
  
  Published Online：13 March 2018，
  
  Received：12 July 2017，
  
  Revised：31 August 2017，
  
  Accepted：17 September 2017
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Cite this article
Jing-Yan Xu, Shu-Ming Chen, Rui-Qiang Song, et al. Analysis of Single-Event Transient Sensitivity in Fully-Depleted Silicon-on-Insulator MOSFETs. [J]. Nuclear Science and Techniques 29(4):49(2018)
DOI：

Jing-Yan Xu, Shu-Ming Chen, Rui-Qiang Song, et al. Analysis of Single-Event Transient Sensitivity in Fully-Depleted Silicon-on-Insulator MOSFETs. [J]. Nuclear Science and Techniques 29(4):49(2018) DOI： 10.1007/s41365-018-0391-3.

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Analysis of Single-Event Transient Sensitivity in Fully-Depleted Silicon-on-Insulator MOSFETs Cover Article Enhanced Publication