Jing-Yan Xu; Shu-Ming Chen; Rui-Qiang Song; Zhen-Yu Wu; Jian-Jun Chen

doi:10.1007/s41365-018-0391-3

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Analysis of Single-Event Transient Sensitivity in Fully-Depleted Silicon-on-Insulator MOSFETs

NUCLEAR ELECTRONICS AND INSTRUMENTATION | 更新时间：2021-02-07

- Analysis of Single-Event Transient Sensitivity in Fully-Depleted Silicon-on-Insulator MOSFETs 封面论文增强出版
- Analysis of Single-Event Transient Sensitivity in Fully-Depleted Silicon-on-Insulator MOSFETs
- 核技术（英文版） 2018年 29卷第4期 (2018)
- 作者机构：
  
  College of Computer, National University of Defense Technology,Changsha,China,410073;National Laboratory for Parallel and Distributed Processing, National University of Defense Technology,Changsha,China,410073
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China
- DOI：10.1007/s41365-018-0391-3 中图分类号：
- 纸质出版日期：2018-04-01，
  
  网络出版日期：2018-03-13，
  
  收稿日期：2017-07-12，
  
  修回日期：2017-08-31，
  
  录用日期：2017-09-17
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引用本文
Jing-Yan Xu, Shu-Ming Chen, Rui-Qiang Song, 等. Analysis of Single-Event Transient Sensitivity in Fully-Depleted Silicon-on-Insulator MOSFETs[J]. 核技术（英文版）, 2018, 29(4):49

Jing-Yan Xu, Shu-Ming Chen, Rui-Qiang Song, et al. Analysis of Single-Event Transient Sensitivity in Fully-Depleted Silicon-on-Insulator MOSFETs[J]. Nuclear Science and Techniques, 2018, 29(4):49
Jing-Yan Xu, Shu-Ming Chen, Rui-Qiang Song, 等. Analysis of Single-Event Transient Sensitivity in Fully-Depleted Silicon-on-Insulator MOSFETs[J]. 核技术（英文版）, 2018, 29(4):49 DOI： 10.1007/s41365-018-0391-3.

Jing-Yan Xu, Shu-Ming Chen, Rui-Qiang Song, et al. Analysis of Single-Event Transient Sensitivity in Fully-Depleted Silicon-on-Insulator MOSFETs[J]. Nuclear Science and Techniques, 2018, 29(4):49 DOI： 10.1007/s41365-018-0391-3.

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Analysis of Single-Event Transient Sensitivity in Fully-Depleted Silicon-on-Insulator MOSFETs 封面论文 增强出版

Analysis of Single-Event Transient Sensitivity in Fully-Depleted Silicon-on-Insulator MOSFETs 封面论文增强出版