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Experimental study of temperature dependence of single event upset in SRAMs

NUCLEAR ELECTRONICS AND INSTRUMENTATION | 更新时间：2021-02-23

- Experimental study of temperature dependence of single event upset in SRAMs 封面论文增强出版
- Experimental study of temperature dependence of single event upset in SRAMs
- 核技术（英文版） 2016年 27卷第1期 (2016)
- 作者机构：
  
  China Institute of Atomic Energy,Beijing,China,102413
- 作者简介：
- 基金信息：
- DOI：10.1007/s41365-016-0014-9 中图分类号：
- 纸质出版日期：2016-02-20，
  
  网络出版日期：2016-02-27，
  
  收稿日期：2015-01-09，
  
  修回日期：2015-04-13，
  
  录用日期：2015-04-15
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引用本文
蔡莉, 郭刚, 刘建成, 等. Experimental study of temperature dependence of single event upset in SRAMs[J]. 核技术（英文版）, 2016, 27(1):16

Li CAI, Gang GUO, Jian-Cheng LIU, et al. Experimental study of temperature dependence of single event upset in SRAMs[J]. Nuclear Science and Techniques, 2016, 27(1):16
蔡莉, 郭刚, 刘建成, 等. Experimental study of temperature dependence of single event upset in SRAMs[J]. 核技术（英文版）, 2016, 27(1):16 DOI： 10.1007/s41365-016-0014-9.

Li CAI, Gang GUO, Jian-Cheng LIU, et al. Experimental study of temperature dependence of single event upset in SRAMs[J]. Nuclear Science and Techniques, 2016, 27(1):16 DOI： 10.1007/s41365-016-0014-9.

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Experimental study of temperature dependence of single event upset in SRAMs 封面论文 增强出版

Experimental study of temperature dependence of single event upset in SRAMs 封面论文增强出版