Guo-Dong Cheng; Ye Chen; Long YAN; Rong-Fang Shen

doi:10.1007/s41365-017-0263-2

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PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation

NUCLEAR CHEMISTRY, RADIOCHEMISTRY, NUCLEAR MEDICINE | Updated：2021-02-23

- PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation Cover Article Enhanced Publication
- Nuclear Science and Techniques Vol.28, Issue 8, (2017)
- Affiliations：
  
  Key Laboratory of Polar Materials and Devices, Ministry of Education of China, East China Normal University,Shanghai,China,200241;Shanghai Institute of Applied Physics, Chinese Academy of Sciences,Shanghai,China,201800
- Author bio：
- Funds：
- DOI：10.1007/s41365-017-0263-2 CLC：
- Published：01 August 2017，
  
  Published Online：29 June 2017，
  
  Received：10 January 2017，
  
  Revised：24 February 2017，
  
  Accepted：27 February 2017
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Cite this article
Guo-Dong Cheng, Ye Chen, Long YAN, et al. PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation. [J]. Nuclear Science and Techniques 28(8):105(2017)
DOI：

Guo-Dong Cheng, Ye Chen, Long YAN, et al. PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation. [J]. Nuclear Science and Techniques 28(8):105(2017) DOI： 10.1007/s41365-017-0263-2.

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PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation Cover Article Enhanced Publication