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Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates

NUCLEAR ELECTRONICS AND INSTRUMENTATION | Updated：2022-02-23

- Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates Cover Article Enhanced Publication
- Nuclear Science and Techniques Vol.28, Issue 10, (2017)
- Affiliations：
  
  Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University,Xi’an,China,710071
- Author bio：
- Funds：
- DOI：10.1007/s41365-017-0295-7 CLC：
- Published：01 October 2017，
  
  Published Online：09 September 2017，
  
  Received：29 September 2016，
  
  Revised：28 March 2017，
  
  Accepted：01 April 2017
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Cite this article
Qian-Qiong Wang, Hong-Xia Liu, Shu-Long Wang, et al. Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates. [J]. Nuclear Science and Techniques 28(10):151(2017)
DOI：

Qian-Qiong Wang, Hong-Xia Liu, Shu-Long Wang, et al. Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates. [J]. Nuclear Science and Techniques 28(10):151(2017) DOI： 10.1007/s41365-017-0295-7.

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Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates Cover Article Enhanced Publication