Qian-Qiong Wang; Hong-Xia Liu; Shu-Long Wang; Chen-Xi Fei; Dong-Dong Zhao; Shu-Peng Chen; Wei Chen

doi:10.1007/s41365-017-0295-7

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Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates

NUCLEAR ELECTRONICS AND INSTRUMENTATION | 更新时间：2022-02-23

- Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates 封面论文增强出版
- Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates
- Nuclear Science and Techniques 2017年 28卷第10期 (2017)
- 作者机构：
  
  Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University,Xi’an,China,710071
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(61376099);Foundation for Fundamental Research of China(JSZL2016110B003);Major Fundamental Research Program of Shaanxi(2017ZDJC-26)
- DOI：10.1007/s41365-017-0295-7 中图分类号：
- 纸质出版日期：2017-10-01，
  
  网络出版日期：2017-09-09，
  
  收稿日期：2016-09-29，
  
  修回日期：2017-03-28，
  
  录用日期：2017-04-01
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Qian-Qiong Wang, Hong-Xia Liu, Shu-Long Wang, 等. Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates[J]. Nuclear Science and Techniques, 2017, 28(10):151

Qian-Qiong Wang, Hong-Xia Liu, Shu-Long Wang, et al. Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates[J]. Nuclear Science and Techniques, 2017, 28(10):151
Qian-Qiong Wang, Hong-Xia Liu, Shu-Long Wang, 等. Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates[J]. Nuclear Science and Techniques, 2017, 28(10):151 DOI： 10.1007/s41365-017-0295-7.

Qian-Qiong Wang, Hong-Xia Liu, Shu-Long Wang, et al. Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates[J]. Nuclear Science and Techniques, 2017, 28(10):151 DOI： 10.1007/s41365-017-0295-7.

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Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates 封面论文 增强出版

Total ionizing dose effect of gamma rays on H-gate PDSOI MOS devices at different dose rates 封面论文增强出版