1,H or ,4,He depth profiling in ,1,H or ,4,He implanted silicon samples was performed by elastic recoil detection (ERD) with multicharged ,19,F ions at a small accelerator. Optimization of the experimental parameters such as incident ions energy and scattering geometry were calculated by computer simulation. Depth resolution of about 20-30nm at depth of 400nm for,1,H and at depth of 300nm for ,4,He can be obtained, respectively.
Elastic recoil detectionDepth profiling
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