DEPTH PROFILING OF 1H AND/OR 4He IN SOLIDS BY ERD WITH 19F IONS

Peiran Zhu; Jiarui Liu; Mengmei Ren; Aigou Feng; Dawan Li

Your Location：

Home >

Browse articles >

DEPTH PROFILING OF ¹H AND/OR ⁴He IN SOLIDS BY ERD WITH ¹⁹F IONS

Updated：2021-02-05

- DEPTH PROFILING OF ¹H AND/OR ⁴He IN SOLIDS BY ERD WITH ¹⁹F IONS
- Nuclear Science and Techniques Vol. 1, Issue 1-2, (1990)
- Affiliations：
  
  1.Institute of Physics, Academia Sinica, Beijing 100080, China
  2.Central Institute of Nationality, Beijing 100081, China
- Author bio：
- Funds：
- DOI：
  CLC：
Scan for full text
Peiran Zhu, Jiarui Liu, Mengmei Ren, et al. DEPTH PROFILING OF ¹H AND/OR ⁴He IN SOLIDS BY ERD WITH ¹⁹F IONS. [J]. Nuclear Science and Techniques 1(1-2):65-69(1990)
DOI：

Peiran Zhu, Jiarui Liu, Mengmei Ren, et al. DEPTH PROFILING OF ¹H AND/OR ⁴He IN SOLIDS BY ERD WITH ¹⁹F IONS. [J]. Nuclear Science and Techniques 1(1-2):65-69(1990) DOI：

摘要

Abstract

1,H or ,4,He depth profiling in ,1,H or ,4,He implanted silicon samples was performed by elastic recoil detection (ERD) with multicharged ,19,F ions at a small accelerator. Optimization of the experimental parameters such as incident ions energy and scattering geometry were calculated by computer simulation. Depth resolution of about 20-30nm at depth of 400nm for,1,H and at depth of 300nm for ,4,He can be obtained, respectively.

关键词

Keywords

Elastic recoil detectionDepth profiling

references

J. Ziegler ed., New uses of ion accelerators. Plenum Press. 1975.

J. L'Ecuyer et al., J. Appl. Phys., 47 (1976), 381.

Lao Fei et al., Chinese J. Nucl. Phys., 3 (1986), 257.

Liu Jiarui et al., Aeta Phys. Sinica, 37 (1988), 71.

J. Ziegler et al., The Stopping and range of ions in matter. Plenum Press, 1985.

Views

Downloads

CSCD

Alert me when the article has been cited

Submit

Tools

Publicity Resources

DEPTH PROFILING OF DEUTERIUM IN Al₂O₃

CALCULATION AND OPTIMIZATION OF EXPERIMENTAL PARAMETERS IN ELASTIC RECOIL DETECTION (ERD)

Related Author

No data

Related Institution

Institute of Applied Electronics of CAEP

Graduate School of China Academy of Engineering PhysicsCAEP

Department of Nuclear Science, Fudan University

Central Institute of Nationalities

Address：Editorial Office of NST, 2019 Jialuo Road, Jiading, Shanghai 201800, China Postal code：201800
Email：nst@sinap.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 沪ICP备05005479号-1 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰