Effects of high-energy proton irradiation on separate absorption and multiplication GaN avalanche photodiode

Gui-Peng Liu; Xin Wang; Meng-Nan Li; Zheng-Peng Pang; Yong-Hui Tian; Jian-Hong Yang

doi:10.1007/s41365-018-0480-3

Your Location：

Home >

Browse articles >

Effects of high-energy proton irradiation on separate absorption and multiplication GaN avalanche photodiode

NUCLEAR CHEMISTRY, RADIO CHEMISTRY, NUCLEAR MEDICINE | Updated：2021-02-07

- Effects of high-energy proton irradiation on separate absorption and multiplication GaN avalanche photodiode
- Nuclear Science and Techniques Vol. 29, Issue 10, Article number: 139(2018)
- Affiliations：
  
  1.Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China
  2.China Academy of Electronic and Information Technology, Beijing 100041, China
- Author bio：
  
  Corresponding author, E-mail address: liugp@lzu.edu.cn
  yangjh@lzu.edu.cn
- Funds：
- DOI：10.1007/s41365-018-0480-3
  CLC：
Scan for full text
Gui-Peng Liu, Xin Wang, Meng-Nan Li, et al. Effects of high-energy proton irradiation on separate absorption and multiplication GaN avalanche photodiode. [J]. Nuclear Science and Techniques 29(10):139(2018)
DOI：

Gui-Peng Liu, Xin Wang, Meng-Nan Li, et al. Effects of high-energy proton irradiation on separate absorption and multiplication GaN avalanche photodiode. [J]. Nuclear Science and Techniques 29(10):139(2018) DOI： 10.1007/s41365-018-0480-3.

摘要

Abstract

The effect of high-energy proton irradiation on GaN based ultraviolet avalanche photodiodes (APDs) is investigated. The dark current of the GaN APD is calculated as a function of the proton energy and proton fluences. By considering the diffusion, generation-recombination, local hopping conductivity, band-to-band tunneling, and trap-assisted tunneling currents, we found that the dark current increases as the proton fluence increases, but decreases with increasing proton energy.

关键词

Keywords

Proton irradiationGaN avalanche photodiode (APD)Dark currentDetectors

references

J. Duboz, E. Frayssinet, S. Chenot, et al., X-ray detector based on GaN, Proc. of SPIE, 86251W (2013). doi: 10.1117/12.2007827http://doi.org/10.1117/12.2007827

H.C. Chiamori, R. Miller, A. Suria, et al., Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors, SPIE Sensing Technology + Applications, 949107 (2015). doi: 10.1117/12.2178091http://doi.org/10.1117/12.2178091

M. Chen, J.-K. Sheu, M.-L. Lee, et al., Improved performance of planar GaN-based p-i-n photodetectors with Mg-implanted isolation ring, Appl. Phys. Lett., 89, 183509 (2006). doi: 10.1063/1.2372767http://doi.org/10.1063/1.2372767

R. D. Dupuis, J.-H. Ryou, S.-C. Shen, et al., Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes, J. Cryst. Growth, 310, 5217-5222 (2008). doi: 10.1016/j.jcrysgro.2008.07.107http://doi.org/10.1016/j.jcrysgro.2008.07.107

A. Ionascut-Nedelcescu, C. Carlone, A. Houdayer, et al., Radiation hardness of gallium nitride, IEEE Trans. Nucl. Sci., 49, 2733-2738 (2002). doi: 10.1109/TNS.2002.805363http://doi.org/10.1109/TNS.2002.805363

M. Gussenhoven, E. Mullen, D. Brautigam, Improved understanding of the Earth's radiation belts from the CRRES satellite, IEEE Trans. Nucl. Sci., 43, 353-368 (1996). doi: 10.1109/23.490755http://doi.org/10.1109/23.490755

S. Verghese, K. McIntosh, R.J. Molnar, et al., GaN avalanche photodiodes operating in linear-gain mode and Geiger mode, IEEE Trans. Electron Devices, 48, 502-511 (2001). doi: 10.1109/16.906443http://doi.org/10.1109/16.906443

Y. Zhou, C. Ahyi, C.-C. Tin, et al., Fabrication and device characteristics of Schottky-type bulk GaN-based “visible-blind” ultraviolet photodetectors, Appl. Phys. Lett. 90, 121118 (2007). doi: 10.1063/1.2715114http://doi.org/10.1063/1.2715114

J. L. Pau, C. Bayram, R. McClintock, et al. Back-illuminated separate absorption and multiplication GaN avalanche photodiodes, Appl. Phys. Lett., 92, 101120-1-101120-3 (2008). doi: 10.1063/1.2897039http://doi.org/10.1063/1.2897039

M.-H. Ji, J. Kim, T. Detchprohm, et al. p-i-p-i-n Separate Absorption and Multiplication Ultraviolet Avalanche Photodiodes, IEEE Photon. Technol. Lett., 30, 181-184, (2018). doi: 10.1109/LPT.2017.2779798http://doi.org/10.1109/LPT.2017.2779798

Z. Shao, D. Chen, Y. Liu, et al., Significant performance improvement in AlGaN solar-blind avalanche photodiodes by exploiting the built-in polarization electric field, IEEE J. Sel. Topics Quantum Electron., 20, 187-192 (2014). doi: 10.1109/JSTQE.2014.2328437http://doi.org/10.1109/JSTQE.2014.2328437

X. Wang, W. Hu, M. Pan, et al., Study of gain and photoresponse characteristics for back-illuminated separate absorption and multiplication GaN avalanche photodiodes, J. Appl. Phys., 115, 013103 (2014). doi: 10.1063/1.4861148http://doi.org/10.1063/1.4861148

J.F. Ziegler, M.D. Ziegler, J.P. Biersack, SRIM-The stopping and range of ions in matter (2010), Nucl. Instrum. Methods Phys. Res. B Beam Interact. Mater. At., 268, 1818-1823 (2010). doi: 10.1016/j.nimb.2010.02.091http://doi.org/10.1016/j.nimb.2010.02.091

U Saha, K Devan, S Ganesan, A study to compute integrated dpa for neutron and ion irradiation environments using SRIM-2013, J. Nucl. Mater., 503 30-41 (2018). doi: 10.1016/j.jnucmat.2018.02.039http://doi.org/10.1016/j.jnucmat.2018.02.039

H.-Y. Kim, J. Kim, L. Liu, et al., Effects of proton irradiation energies on degradation of AlGaN/GaN high electron mobility transistors, J. Vac. Sci. Technol. B, 30, 012202 (2012). doi: 10.1116/1.3676034http://doi.org/10.1116/1.3676034

S.J. Pearton, R. Deist, F. Ren, et al., Review of radiation damage in GaN-based materials and devices, J. Vac. Sci. Technol. A Vac. Surf. Films, 31, 050801 (2013). doi: 10.1116/1.4799504http://doi.org/10.1116/1.4799504

S. Messenger, E. Burke, G. Summers, et al., Nonionizing energy loss (NIEL) for heavy ions, IEEE Trans. Nucl. Sci., 46, 1595-1602 (1999). doi: 10.1109/23.819126http://doi.org/10.1109/23.819126

I. Jun, M.A. Xapsos, S.R. Messenger, et al., Proton nonionizing energy loss (NIEL) for device applications, IEEE Trans. Nucl. Sci., 50, 1924-1928 (2003). doi: 10.1109/TNS.2003.820760http://doi.org/10.1109/TNS.2003.820760

F. Gao, N. Chen, E. Hernandez-Rivera, et al., Displacement damage and predicted non-ionizing energy loss in GaAs, J. Appl. Phys., 121, 095104 (2017). doi: 10.1063/1.4977861http://doi.org/10.1063/1.4977861

S.M. Sze, K.K. Ng, Metal-semiconductor contacts, Physics of semiconductor devices, (2006) 134-196.

S. Forrest, R. Leheny, R. Nahory, et al., In0.53Ga0.47As photodiodes with dark current limited by generation-recombination and tunneling, Appl. Phys. Lett., 37, 322-325 (1980). doi: 10.1063/1.91922http://doi.org/10.1063/1.91922

D. Monroe, Hopping in exponential band tails, Physical Review Letters, 54, 146 (1985). doi: 10.1103/PhysRevLett.54.146http://doi.org/10.1103/PhysRevLett.54.146

T. Tiedje, A. Rose, A physical interpretation of dispersive transport in disordered semiconductors, Solid State Commun., 37, 49-52 (1981). doi: 10.1016/0038-1098(81)90886-3http://doi.org/10.1016/0038-1098(81)90886-3

N. Bochkareva, V. Voronenkov, R. Gorbunov, et al., Hopping conductivity and dielectric relaxation in Schottky barriers on GaN, Semic, 51, 1186-1193 (2017). doi: 10.1134/S1063782617090068http://doi.org/10.1134/S1063782617090068

C. Qiu, C. Hoggatt, W. Melton, et al., Study of defect states in GaN films by photoconductivity measurement, Appl. Phys. Lett., 66, 2712-2714 (1995). doi: 10.1063/1.113497http://doi.org/10.1063/1.113497

D. V. Kuksenkov, H. Temkin, Low-frequency noise and performance of GaN p-n junction photodetectors, J. Appl. Phys., 83, 2142-2146 (1998). doi: 10.1063/1.366950http://doi.org/10.1063/1.366950

J.P. Donnelly, E.K. Duerr, K.A. McIntosh, et al., Design considerations for 1.06-μm InGaAsP-InP Geiger-mode avalanche photodiodes, IEEE J. Quantum Electron., 42, 797-809 (2006). doi: 10.1109/JQE.2006.877300http://doi.org/10.1109/JQE.2006.877300

P. Muret, A. Philippe, E. Monroy, et al., Properties of a hole trap in n-type hexagonal GaN, J. Appl. Phys., 91, 2998-3001 (2002). doi: 10.1063/1.1433935http://doi.org/10.1063/1.1433935

D.C. Look, Defect-Related Donors, Acceptors, and Traps in GaN, physica status solidi (b), 228, 293-302 (2001). doi: 10.1002/1521-3951(200111)228:1<293::AID-PSSB293>3.0.CO;2-Fhttp://doi.org/10.1002/1521-3951(200111)228:1<293::AID-PSSB293>3.0.CO;2-F

M.A. Reshchikov, H. Morkoç, Luminescence properties of defects in GaN, J. Appl. Phys., 97, 5-19 (2005). doi: 10.1063/1.1868059http://doi.org/10.1063/1.1868059

S.-F. Tang, H.-H. Hsieh, H.-Y. Tu, et al., Investigations for InAs/GaAs multilayered quantum-dot structure treated by high energy proton irradiation, Thin Solid Films, 518, 7425-7428 (2010). doi: 10.1016/j.tsf.2010.05.009http://doi.org/10.1016/j.tsf.2010.05.009

Views

Downloads

CSCD

Alert me when the article has been cited

Submit

Tools

Publicity Resources

Cross-sectional investigation of radiation damage of 2 MeV proton irradiated silicon carbide

MICROSTRUCTURAL CHANGE OF YSZ- SUPPORTED YBaCuO SUPPERCONDUCTING FILM BY PROTON BEAM BOMBARDMENTS

Related Author

No data

Related Institution

Institute of Materials, China Academy of Engineering Physics

Department of Nuclear Physics, China Institute of Atomic Energy

State Key Laboratory of Nuclear Physics and Technology, Institute of Heavy Ion Physics, School of Physics, Peking University

Nanjing University

Address：Editorial Office of NST, 2019 Jialuo Road, Jiading, Shanghai 201800, China Postal code：201800
Email：nst@sinap.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 沪ICP备05005479号-1 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰