Characterization of silicon microstrip sensors for space astronomy

Jia-Ju Wei; Jian-Hua Guo; Yi-Ming Hu

doi:10.1007/s41365-020-00811-9

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Characterization of silicon microstrip sensors for space astronomy

NUCLEAR ELECTRONICS AND INSTRUMENTATION | Updated：2021-01-26

- Characterization of silicon microstrip sensors for space astronomy
- Nuclear Science and Techniques Vol. 31, Issue 10, Article number: 97(2020)
- Affiliations：
  
  1.Purple Mountain Observatory, Chinese Academy of Sciences, Nanjing 210023, China
  2.Key Laboratory of Dark Matter and Space Astronomy, Chinese Academy of Sciences, Nanjing 210023, China
- Author bio：
  
  Corresponding author, weijj@pmo.ac.cn
- Funds：
- DOI：10.1007/s41365-020-00811-9
  CLC：
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Jia-Ju Wei, Jian-Hua Guo, Yi-Ming Hu. Characterization of silicon microstrip sensors for space astronomy. [J]. Nuclear Science and Techniques 31(10):97(2020)
DOI：

Jia-Ju Wei, Jian-Hua Guo, Yi-Ming Hu. Characterization of silicon microstrip sensors for space astronomy. [J]. Nuclear Science and Techniques 31(10):97(2020) DOI： 10.1007/s41365-020-00811-9.

摘要

Abstract

Silicon microstrip detectors are widely used in experiments for space astronomy. Before the detector is assembled, extensive characterization of the silicon microstrip sensors is indispensable and challenging. This work electrically evaluates a series of sensor parameters, including the depletion voltage, bias resistance, metal strip resistance, total leakage current, strip leakage current, coupling capacitance, and interstrip capacitance. Two methods are used to accurately measure the strip leakage current, and the test results match each other well. In measuring the coupling capacitance, we extract the correct value based on a SPICE model and two-port network analysis. In addition, the expression of the measured bias resistance is deduced based on the SPICE model.

关键词

Keywords

Silicon microstrip sensorSpace astronomyCharacterizationSPICE model

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Related Institution

Key Laboratory of Particle and Radiation Imaging (Ministry of Education) and Department of Engineering Physics, Tsinghua University

School of Physics and Electromechnical Engineering, Zhoukou Normal University

Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Jiading Campus

University of Chinese Academy of Sciences

Zhejiang Insitute of Application Energy and Nuclear Technology

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