1.Centre de Recherche Nucléaire de Birine, Ain Oussera 17200, Algeria.
2.Institut Algérien de formation en Génie Nucléaire, Draria, Alger 16050, Algérie.
Corresponding author:mn_salhi@yahoo.fr
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M. Salhi, B. Mohammedi, S. Laouar, et al. Conceptual design of irradiation device for silicon neutron transmutation doping around Es-Salam research reactor. [J]. Nuclear Science and Techniques 31(4):38(2020)
M. Salhi, B. Mohammedi, S. Laouar, et al. Conceptual design of irradiation device for silicon neutron transmutation doping around Es-Salam research reactor. [J]. Nuclear Science and Techniques 31(4):38(2020) DOI: 10.1007/s41365-020-0747-3.
Silicon neutron transmutation doping remains one of the most viable nuclear applications for research reactors. Providing this kind of product involves an irradiation method capable of fulfilling the quality requirements of doping and alleviating the challenges related to the design and safety of the irradiation device. In this paper, we propose an irradiation device prototype for neutron transmutation doping of silicon ingots with diameters of 2 to 3 in based on the Es-Salam research reactor. The thermal hydraulic analysis of the proposed irradiation device was performed to determine the optimum conditions for cooling. The effect of the mechanical vibrations induced by the circulation of coolant in the device was quantified via experimental measurements under different flow rates. The results show that the maximum temperature reached by the silicon ingots is below the temperature limit, effectively validating the design of the irradiation device. Other investigations are prospected to further optimize the design and the irradiation conditions. The irradiation of silicon ingots with a large diameter will be considered.
Key words: Irradiation device prototypeEs-Salam research reactorNTD-SiIrradiation temperatureCFD method
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